An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors PDF Download

Author: James M. Sattler
Publisher:
ISBN: 9781423516590
Category :
Languages : en
Pages : 143

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Book Description
The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T