Amorphous and Crystalline Silicon Carbide III PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Amorphous and Crystalline Silicon Carbide III PDF full book. Access full book title Amorphous and Crystalline Silicon Carbide III by Gary L. Harris. Download full books in PDF and EPUB format.
Author: Gary L. Harris
Publisher: Springer
ISBN: 9783642844027
Category : Science
Languages : en
Pages : 0
Get Book Here
Book Description
This volume contains written versions of the papers presented at the Third Inter national Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, DC. The ICACSC continued to provide an international forum for discussion and exchange of ideas regarding the current state of research aimed at developing silicon carbide devices and circuits and related materials. ICACSC attracted over one hundred participants from seven countries. A special session was held in honor of the eight Soviet scientists who attended the conference. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. The conference also included a poster session for the first time. This volume contains 54 refereed contributions grouped into four parts. Several exciting new results are reported for the first time here: SiC-based solid-solution growth and technology, the formation of SiGe heterostructures by ion implantation, 6H-SiC substrates grown by the sublimation method, expla nation of the appearance of negative differential resistance in a N+PN-SiC-6H transistor by the Wannier-Starck effect, the formation of amorphous SiC/Si het erojunctions by the polymer route, and the prospects of developing SiC bipolar transistors and thyristors.
Author: Gary L. Harris
Publisher: Springer
ISBN: 9783642844027
Category : Science
Languages : en
Pages : 0
Get Book Here
Book Description
This volume contains written versions of the papers presented at the Third Inter national Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, DC. The ICACSC continued to provide an international forum for discussion and exchange of ideas regarding the current state of research aimed at developing silicon carbide devices and circuits and related materials. ICACSC attracted over one hundred participants from seven countries. A special session was held in honor of the eight Soviet scientists who attended the conference. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. The conference also included a poster session for the first time. This volume contains 54 refereed contributions grouped into four parts. Several exciting new results are reported for the first time here: SiC-based solid-solution growth and technology, the formation of SiGe heterostructures by ion implantation, 6H-SiC substrates grown by the sublimation method, expla nation of the appearance of negative differential resistance in a N+PN-SiC-6H transistor by the Wannier-Starck effect, the formation of amorphous SiC/Si het erojunctions by the polymer route, and the prospects of developing SiC bipolar transistors and thyristors.
Author: Gary Lynn Harris
Publisher: Springer
ISBN:
Category : Silicon carbide
Languages : en
Pages : 392
Get Book Here
Book Description
Author: Cary Y. Yang
Publisher: Springer Science & Business Media
ISBN: 3642848044
Category : Science
Languages : en
Pages : 439
Get Book Here
Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author: Gary Lynn Harris
Publisher: Springer
ISBN: 9783540536031
Category : Silicon carbide
Languages : en
Pages : 372
Get Book Here
Book Description
"Papers presented at the Third International Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (ICACSC 90)"--Pref.
Author: Cary Y. Yang
Publisher: Springer
ISBN: 9783540556879
Category : Science
Languages : en
Pages : 458
Get Book Here
Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author: Zongyuan Yang
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Gary L. Harris
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 220
Get Book Here
Book Description
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Author: Mahmud M. Rahman
Publisher: Springer Science & Business Media
ISBN: 3642750486
Category : Science
Languages : en
Pages : 238
Get Book Here
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Cary Y Yang
Publisher:
ISBN: 9783642848056
Category :
Languages : en
Pages : 448
Get Book Here
Book Description
Author: J. Doneker
Publisher: Routledge
ISBN: 1351456474
Category : Science
Languages : en
Pages : 524
Get Book Here
Book Description
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
