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Author: Alvin G. Randolph
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 160
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Book Description
"Aluminum nitride thin films ( -1000 A) have been deposited on silicon substrate by re active sputtering using Al target in 1 : 1 Ar:N2 environment. The atomic force microscopy examination revealed continuous microcrystalline film structure. The Auger electron spectroscopic analysis shows the presence of oxygen in the films. The annealing at 850 C in nitrogen is found to cause recrystallinization and, by FTIR analysis, further oxidation of the films. The films can be characterized as lossy dielectrics with relative permittivity ~ 10, higher than the bulk value of 8.9. Annealing the films is found to reduce anion vacancies and improve the dielectric strength within a range of a few MV/cm in these thin films. Optical constants, n & k, have been obtained from reflectance and transmittance spec tra (190-900 nm) of films on fused silica. The results indicate the presence of a low energy absorption tail, and exponential absorption that is proportional to degree of disorder in the film. The average defect density of the film as deposited was 1.1 x 10^20 cm"3. Annealing the film at 760 C increased the degree of disorder resulting in an average defect density of 3.4 x 10^20 cm^-3. Subsequent annealing at 800 C and 850 C systematically decreased the degree of disorder and the average defect density. The real part of permittivity (e1) of the annealed films over this frequency range varies approximately +-0.5 from the e(infinity) of 4.84"--Abstract.
Author: Alvin G. Randolph
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 160
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Book Description
"Aluminum nitride thin films ( -1000 A) have been deposited on silicon substrate by re active sputtering using Al target in 1 : 1 Ar:N2 environment. The atomic force microscopy examination revealed continuous microcrystalline film structure. The Auger electron spectroscopic analysis shows the presence of oxygen in the films. The annealing at 850 C in nitrogen is found to cause recrystallinization and, by FTIR analysis, further oxidation of the films. The films can be characterized as lossy dielectrics with relative permittivity ~ 10, higher than the bulk value of 8.9. Annealing the films is found to reduce anion vacancies and improve the dielectric strength within a range of a few MV/cm in these thin films. Optical constants, n & k, have been obtained from reflectance and transmittance spec tra (190-900 nm) of films on fused silica. The results indicate the presence of a low energy absorption tail, and exponential absorption that is proportional to degree of disorder in the film. The average defect density of the film as deposited was 1.1 x 10^20 cm"3. Annealing the film at 760 C increased the degree of disorder resulting in an average defect density of 3.4 x 10^20 cm^-3. Subsequent annealing at 800 C and 850 C systematically decreased the degree of disorder and the average defect density. The real part of permittivity (e1) of the annealed films over this frequency range varies approximately +-0.5 from the e(infinity) of 4.84"--Abstract.
Author: Jung Won Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 227
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Book Description
Keywords: plasma diagnostics, thermal conductivity, AlN, pulsed DC sputtering.
Author: Mark A. Prelas
Publisher: Springer Science & Business Media
ISBN: 9401155925
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
Diamond-based composites, with their advantages of hardness, high Young's modulus and the like, have demonstrated new and unusual features, such as stability to high temperatures and pressure shocks and a large internal surface that can be controlled to offer customised electrical, magnetic and optical properties, leading to efficient filters, absorbents, sensors and other tools for environmental control and monitoring. The current book covers the synthesis of materials, their characterization and properties, trends in high pressure and high temperature technologies, low pressure technologies, basic principles of DBC material science, and future developments in electronics, optics, industrial tools and components, biotechnology, and medicine. Wide band-gap materials are considered, ranging from molecular clusters, nanophase materials, growth, processing and synthesis. The processing of composite based materials can be classified into six basic methods: in situ growth, high pressure/high temperature catalytic conversion; mix and sinter (c-BN plus metal-ceramic polymer mix); direct sintering; direct polymorphic conversion; shock detonation; and SHS sintering.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films. Two types of pulsed DC (unipolar and asymmetric bipolar) were studied with respect to characteristics and properties of resultant films. The unipolar power supply generates a series of 75 kHz DC pulses modulated with 2.5 kHz frequency. The frequency of asymmetric power supply can be varied from 50 kHz to 250 kHz. The duty cycle, which is a ratio of negative pulse time to total time, can be varied from 60% to 98%. Very fast oscillation and overshoot were observed when the polarity of the target voltage was changed. The control of crystal orientation of deposited film is important since the properties of AlN film is related with the orientation. For example, the acoustic velocity is high along the c-axis. The electromechanical coupling coefficient is large in a-axis direction. The crystal orientation and microstructure of the AlN films were strongly affected by the deposition conditions such as sputtering power, growth temperature, sputtering gas pressure and frequency/duty cycle. The crystal orientation of AlN films was closely related with the energy of sputtered atoms and mobility of adatoms on substrate. The c-axis oriented films were obtained when the target power and growth temperature were high. This provided higher energy of sputtered atoms and mobility of adatoms. The deposited AlN films have a columnar structure. The crystal orientation of the AlN films was changed from (101) to (002) by applying an RF bias was applied to the substrate in unipolar pulsed DC sputtering. The columnar structure disappeared when the RF bias was applied to the substrate. Applying bias was thought to increase mobility of adatoms by ion bombardment. MIM (aluminum-AlN-aluminum or molybdenum) structure was fabricated to measure electric properties of AlN films. Dielectric constants of 8.5 to 11.5 were obtained at 100 kHz. Th.
Author: Filipe Vaz
Publisher: Bentham Science Publishers
ISBN: 1608051560
Category : Technology & Engineering
Languages : en
Pages : 363
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Book Description
Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through optoelectronics) to corrosion resistance. Developing a better understanding of the relationships between deposition processes, structure and composition of the deposited films is critical to the continued evolution of these applications. This e-book provides valuable information about the process modeling, fabrication and characterization of metallic oxynitride-based thin films produced by reactive sputtering and some related deposition processes. Its contents are spread in twelve main and concise chapters through which the book thoroughly reviews the bases of oxynitride thin film technology and deposition processes, sputtering processes and the resulting behaviors of these oxynitride thin films. More importantly, the solutions for the growth of oxynitride technology are given in detail with an emphasis on some particular compounds. This is a valuable resource for academic learners studying materials science and industrial coaters, who are concerned not only about fundamental aspects of oxynitride synthesis, but also by their innate material characteristics.
Author: William A. Carrington
Publisher:
ISBN:
Category :
Languages : en
Pages : 146
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Book Description
Author: Al-Ahsan Talukder
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 0
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Book Description
Magnetron sputtering is a popular vacuum plasma coating technique used for depositing metals, dielectrics, semiconductors, alloys, and compounds onto a wide range of substrates. In this work, we present two popular types of magnetron sputtering, i.e., pulsed DC and RF magnetron sputtering, for depositing piezoelectric aluminum nitride (AlN) thin films with high Young's modulus. The effects of important process parameters on the plasma I-V characteristics, deposition rate, and the properties of the deposited AlN films, are studied comprehensively. The effects of these process parameters on Young's modulus of the deposited films are also presented. Scanning electron microscope imaging revealed a c-axis oriented columnar growth of AlN. Performance of surface acoustic devices, utilizing the AlN films deposited by magnetron sputtering, are also presented, which confirms the differences in qualities and microstructures of the pulsed DC and RF sputtered films. The RF sputtered AlN films showed a denser microstructure with smaller grains and a smoother surface than the pulsed DC sputtered films. However, the deposition rate of RF sputtering is about half of the pulsed DC sputtering process. We also present a novel ion source enhanced pulsed DC magnetron sputtering for depositing high-quality nitrogen-doped zinc telluride (ZnTe:N) thin films. This ion source enhanced magnetron sputtering provides an increased deposition rate, efficient N-doping, and improved electrical, structural, and optical properties than the traditional magnetron sputtering. Ion source enhanced deposition leads to ZnTe:N films with smaller lattice spacing and wider X-ray diffraction peak, which indicates denser films with smaller crystallites embedded in an amorphous matrix.
Author: Masood Hasheminiasari
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 168
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Book Description
Author: David A Glocker
Publisher: CRC Press
ISBN: 1351089684
Category : Science
Languages : en
Pages : 233
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Book Description
The Handbook of Thin Film Process Technology is a practical handbook for the thin film scientist, engineer and technician. This handbook is regularly updated with new material, and this volume is a special issue on reactive sputtering which will be of interest to a wide range of industrial and academic researchers in addition to owners of the main Handbook. Some recent developments in the reactive sputtering field are covered, including unbalanced magnetron sputtering and pulsed reactive sputtering. The articles contain a wealth of practical information relating to applications, practice and manufacturing techniques.
Author: Charlee Fansler
Publisher:
ISBN: 9783836469722
Category : Technology & Engineering
Languages : en
Pages : 124
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Book Description
Aluminum Nitride (AlN) thin films can be used for many device applications; for example, Surface Acoustic Wave (SAW) devices, microelectromechanical systems (MEMS) applications, and packaging applications. In this work, AlN is the critical layer in the fabrication process. One challenge is reliable deposition over wafer size substrates. The method of interest for deposition is pulsed DC sputtering. The (002) plane is the desired plane for its piezoelectric properties. The surface roughness of the deposited AlN is low and adheres well to the substrate. An AlN layer was deposited on a UNCD/Si substrate. Al was deposited on the AlN layer to form the IDTs (interdigital transducers) for SAW devices. SAW devices were fabricated on quartz - ST substrate. To verify the SAW devices work, they were tested using a network analyzer. This book discusses these results and parameters for AlN film deposition, film properties and implications for devices. This book would be beneficial for professionals, scientists, engineers, and graduate students in science and engineering working in the areas of wide bandgap semi-conductors, nitrides and piezoelectric materials and various acoustic wave devices.
