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Author: Paul Chu
Publisher: BoD – Books on Demand
ISBN: 9533070862
Category : Technology & Engineering
Languages : en
Pages : 458
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Book Description
This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields.
Author: Paul Chu
Publisher: BoD – Books on Demand
ISBN: 9533070862
Category : Technology & Engineering
Languages : en
Pages : 458
Get Book Here
Book Description
This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields.
Author: Paul Chu
Publisher: IntechOpen
ISBN: 9789533070865
Category : Technology & Engineering
Languages : en
Pages : 456
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Book Description
This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields.
Author: Arjun N. Saxena
Publisher: World Scientific
ISBN: 9812814450
Category : Science
Languages : en
Pages : 564
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Book Description
This book is the first to give an authoritative and comprehensive account of the invention of Integrated Circuits (ICs) from an insider who had participated and contributed from the beginning of their invention and advancement to the Ultra Large Scale ICs (ULSICs) of today. It reads like a mystery novel to engross the reader, but it is not based on fiction; it gives documented facts of the invention of ICs, analyzes the patents, and highlights additional details and clarifications of their history. In addition, the book clarifies the Nobel Prize award and raises intriguing questions which as yet remain unanswered even after about half a century since the ICs were invented. This is the invention which has revolutionized the whole world forever!
Author: Cher Ming Tan
Publisher: World Scientific
ISBN: 9814273325
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Author: Carlos Galup-montoro
Publisher: World Scientific
ISBN: 9814477974
Category : Technology & Engineering
Languages : en
Pages : 445
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Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Jacobus Swart
Publisher: IntechOpen
ISBN: 9789533070452
Category : Technology & Engineering
Languages : en
Pages : 474
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Book Description
The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book.
Author: Viranjay M. Srivastava
Publisher: Springer Science & Business Media
ISBN: 3319011650
Category : Technology & Engineering
Languages : en
Pages : 209
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Book Description
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Author: Gun-Sik Park
Publisher: CRC Press
ISBN: 1000995453
Category : Technology & Engineering
Languages : en
Pages : 773
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Book Description
During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical applications. Terahertz photonic and electronic devices are being readied to be employed in application systems such as communication links, satellite communications, radar, surveillance, hard/soft material heating, biomedical treatment, and biomedical diagnostics. This book focuses on the advances in terahertz source technologies both from photonics and electronics (solid-state and vacuum-state) points of view. Written in a noncomplicated language, the book will be useful for a broad spectrum of readers, including advanced undergraduate- and graduate-level students in electronics and photonics, researchers in various disciplines in physics, chemistry, biology, astronomy, and electrical engineering, system engineers in various industrial sectors, general readers, and those who are interested in the interaction between electromagnetic waves and matters and in the effects of electromagnetic waves on matters.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1804
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Book Description
Author: Chenming Hu
Publisher: World Scientific
ISBN: 9814390968
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development.The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
