Advanced Materials and Structures for Nanoscale CMOS Devices PDF Download
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Author: Dae-Won Ha
Publisher:
ISBN:
Category :
Languages : en
Pages : 334
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Book Description
Author: Dae-Won Ha
Publisher:
ISBN:
Category :
Languages : en
Pages : 334
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 840
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 730
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Book Description
Author: Francis Balestra
Publisher: John Wiley & Sons
ISBN: 1118622472
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Mohammed Awad Ali Khalid
Publisher: BoD – Books on Demand
ISBN: 9535133934
Category : Science
Languages : en
Pages : 252
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Book Description
Redox reactions are central to the major element cycling, many cell cycles, many chemisorption and physisorption processes, trace element mobility from rocks and sediments toward wells, aquifers, trace element toxicity toward life forms, and most remediation schemes including water treatments; over the last three decades, the field has attracted a lot of scientists, and a great deal of researches has been done in redox chemistry. This book provides a very broad overview of the state of the art of understanding redox processes, which starts with giving a concise introduction that describes the origin, historical background, and the development of the redox definitions. The book is organized into two sections that include ten chapters and introduces, in Section 1, generalized electron balance theory and its applications in electrolytic redox systems, redox-active molecules and its applications in device memory, fundamentals and applications of flow batteries and their integration into antidirect current, and donor acceptor titrations of displacement and electronic transference. Section 2 introduces redox in biological processes, including roles of reactive oxygen species in respiration, metabolism, and regulations, and redox in physiological processes as redox-sensitive TRP channels TRPA1 and TRPM2. All chapters are written by different authors (with the exception of Chapter 1 [Introduction]). This clearly reflects the broad range of topics that have been covered by experts in the field.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814477478
Category : Technology & Engineering
Languages : en
Pages : 774
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Book Description
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Author: James E. Morris
Publisher: CRC Press
ISBN: 1466565241
Category : Technology & Engineering
Languages : en
Pages : 940
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Book Description
Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566777925
Category : Dielectrics
Languages : en
Pages : 588
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Book Description
Author: David C. Wyld
Publisher: Springer Science & Business Media
ISBN: 364222542X
Category : Computers
Languages : en
Pages : 751
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Book Description
This book constitutes the proceedings of three International Conferences, NeCoM 2011, on Networks & Communications, WeST 2011, on Web and Semantic Technology, and WiMoN 2011, on Wireless and Mobile Networks, jointly held in Chennai, India, in July 2011. The 74 revised full papers presented were carefully reviewed and selected from numerous submissions. The papers address all technical and practical aspects of networks and communications in wireless and mobile networks dealing with issues such as network protocols and wireless networks, data communication technologies, and network security; they present knowledge and results in theory, methodology and applications of the Web and semantic technologies; as well as current research on wireless and mobile communications, networks, protocols and on wireless and mobile security.
Author: Yu Cao
Publisher: Springer Science & Business Media
ISBN: 1461404452
Category : Technology & Engineering
Languages : en
Pages : 186
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Book Description
Predictive Technology Model for Robust Nanoelectronic Design explains many of the technical mysteries behind the Predictive Technology Model (PTM) that has been adopted worldwide in explorative design research. Through physical derivation and technology extrapolation, PTM is the de-factor device model used in electronic design. This work explains the systematic model development and provides a guide to robust design practice in the presence of variability and reliability issues. Having interacted with multiple leading semiconductor companies and university research teams, the author brings a state-of-the-art perspective on technology scaling to this work and shares insights gained in the practices of device modeling.
