Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS

Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS PDF Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658

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Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS

Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS PDF Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 658

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Book Description


Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment PDF Author: P. J. Timans
Publisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488

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Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment PDF Author: E. P. Gusev
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426

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Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment PDF Author: V. Narayanan
Publisher: The Electrochemical Society
ISBN: 1566777097
Category : Gate array circuits
Languages : en
Pages : 367

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Book Description
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 PDF Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 1566775027
Category : Gate array circuits
Languages : en
Pages : 472

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Book Description
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment

Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment PDF Author: E. P. Gusev
Publisher:
ISBN: 9781607681410
Category :
Languages : en
Pages : 412

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Book Description


Gate-stack and Channel Engineering for Advanced CMOS Technology

Gate-stack and Channel Engineering for Advanced CMOS Technology PDF Author: Yee-Chia Yeo
Publisher:
ISBN:
Category :
Languages : en
Pages : 358

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Book Description


Advanced Gate Stacks for High-Mobility Semiconductors

Advanced Gate Stacks for High-Mobility Semiconductors PDF Author: Athanasios Dimoulas
Publisher: Springer Science & Business Media
ISBN: 354071491X
Category : Technology & Engineering
Languages : en
Pages : 397

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Book Description
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Mechanical Stress on the Nanoscale

Mechanical Stress on the Nanoscale PDF Author: Margrit Hanbücken
Publisher: John Wiley & Sons
ISBN: 3527639551
Category : Technology & Engineering
Languages : en
Pages : 354

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Book Description
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.

Chemistry in Microelectronics

Chemistry in Microelectronics PDF Author: Yannick Le Tiec
Publisher: John Wiley & Sons
ISBN: 1118578120
Category : Technology & Engineering
Languages : en
Pages : 261

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Book Description
Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.