Advanced CMOS-Compatible Semiconductor Devices 17 PDF Download
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Author: Y. Omura
Publisher: The Electrochemical Society
ISBN: 1607685957
Category :
Languages : en
Pages : 337
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Book Description
Author: Y. Omura
Publisher: The Electrochemical Society
ISBN: 1607685957
Category :
Languages : en
Pages : 337
Get Book Here
Book Description
Author: J. A. Martino
Publisher: The Electrochemical Society
ISBN: 1607688360
Category : Science
Languages : en
Pages : 230
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Book Description
Author:
Publisher: World Scientific
ISBN: 9812708588
Category : Technology & Engineering
Languages : en
Pages : 205
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Book Description
Annotation. The Proceedings cover five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicongermanium devices, nanoelectronics and ballistic devices, and characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many "first" and break-through results, as has become a tradition with the Lester Eastman Conference and will allow readers to get up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of the state-of-the art and of "hot off the press" results making the book to be required reading for engineers, scientists, and students working on advanced and high speed device technology. Book jacket.
Author: Shubham Tayal
Publisher: John Wiley & Sons
ISBN: 1394166419
Category : Technology & Engineering
Languages : en
Pages : 325
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Book Description
ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Author: Jaume Verd
Publisher: MDPI
ISBN: 3039210688
Category : Technology & Engineering
Languages : en
Pages : 166
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Book Description
Micro and nano-electro-mechanical system (M/NEMS) devices constitute key technological building blocks to enable increased additional functionalities within Integrated Circuits (ICs) in the More-Than-Moore era, as described in the International Technology Roadmap for Semiconductors. The CMOS ICs and M/NEMS dies can be combined in the same package (SiP), or integrated within a single chip (SoC). In the SoC approach the M/NEMS devices are monolithically integrated together with CMOS circuitry allowing the development of compact and low-cost CMOS-M/NEMS devices for multiple applications (physical sensors, chemical sensors, biosensors, actuators, energy actuators, filters, mechanical relays, and others). On-chip CMOS electronics integration can overcome limitations related to the extremely low-level signals in sub-micrometer and nanometer scale electromechanical transducers enabling novel breakthrough applications. This Special Issue aims to gather high quality research contributions dealing with MEMS and NEMS devices monolithically integrated with CMOS, independently of the final application and fabrication approach adopted (MEMS-first, interleaved MEMS, MEMS-last or others).]
Author: Lado Filipovic
Publisher: MDPI
ISBN: 3039210106
Category : Technology & Engineering
Languages : en
Pages : 202
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Book Description
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author: Hiroyuki Akinaga
Publisher: John Wiley & Sons
ISBN: 139425637X
Category : Science
Languages : en
Pages : 292
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Book Description
This book explores a key technology regarding the importance of connections via an Internet of Things network and how this helps us to easily communicate with others and gather information. Namely, what would happen if this suddenly became unavailable due to a shortage of power or electricity? Using thermoelectric generators is a viable solution as they use the heat around us to generate the much-needed electricity for our technological needs. This second volume on the challenges and prospects of thermoelectric generators covers the reliability and durability of thermoelectric materials and devices, the effect of microstructures on the understanding of electronic properties of complex materials, thermoelectric nanowires, the impact of chemical doping or magnetism, thermoelectric generation using the anomalous Nernst effect, phonon engineering, the current state and future prospects of thermoelectric technologies, transition metal silicides, and past, present and future applications of thermoelectrics.
Author: Yasuhisa Omura
Publisher:
ISBN: 9781623322380
Category :
Languages : en
Pages :
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Book Description
Author: Cherry Bhargava
Publisher: CRC Press
ISBN: 1000197123
Category : Technology & Engineering
Languages : en
Pages : 349
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Book Description
Nanotechnology: Advances and Real-Life Applications offers a comprehensive reference text about advanced concepts and applications in the field of nanotechnology. The text – written by researchers practicing in the field – presents a detailed discussion of key concepts including nanomaterials and their synthesis, fabrication and characterization of nanomaterials, carbon-based nanomaterials, nano-bio interface, and nanoelectronics. The applications of nanotechnology in the fields of renewable energy, medicine and agriculture are each covered in a dedicated chapter. The text will be invaluable for senior undergraduate and graduate students in the fields of electrical engineering, electronics engineering, nanotechnology and nanoscience. Dr. Cherry Bhargava is an Associate Professor and Head, VLSI domain, at the School of Electrical and Electronics Engineering of Lovely Professional University, Jalandhar, India. Dr. Amit Sachdeva is an Associate Professor at Lovely Professional University, Jalandhar, India.
Author: Tibor Grasser
Publisher: Springer Nature
ISBN: 3030375005
Category : Technology & Engineering
Languages : en
Pages : 724
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Book Description
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
