Acoustic, Thermal Wave and Optical Characterization of Materials

Acoustic, Thermal Wave and Optical Characterization of Materials PDF Author: G.M. Crean
Publisher: Elsevier
ISBN: 044459664X
Category : Technology & Engineering
Languages : en
Pages : 413

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Book Description
This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.

Acoustic, Thermal Wave and Optical Characterization of Materials

Acoustic, Thermal Wave and Optical Characterization of Materials PDF Author: G.M. Crean
Publisher: Elsevier
ISBN: 044459664X
Category : Technology & Engineering
Languages : en
Pages : 413

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Book Description
This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy PDF Author: Erwin Kasper
Publisher: Elsevier
ISBN: 0080983685
Category : Technology & Engineering
Languages : en
Pages : 378

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Book Description
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

Acoustic, Thermal Wave and Optical Characterization of Materials

Acoustic, Thermal Wave and Optical Characterization of Materials PDF Author: G. M. Crean
Publisher:
ISBN:
Category :
Languages : en
Pages : 135

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Book Description


Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1212

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Book Description


Nondestructive Characterization of Materials II

Nondestructive Characterization of Materials II PDF Author: Jean F. Bussière
Publisher: Springer Science & Business Media
ISBN: 1468453386
Category : Technology & Engineering
Languages : en
Pages : 750

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Book Description
The possibility of nondestructively characterizing the microstruc ture, morphology or mechanical properties of materials is certainly a fascinating subject. In principle, such techniques can be used at all stages of a material's life - from the early stages of processing, to the end of a structural component's useful life. Interest in the subject thus arises not only from a purely scientific point of view but is also strongly motivated by economic pressures to improve productivity and quality in manufacturing, to insure the reliability and extend the life of existing structures. The present volume represents the edited papers presented at the Second International Symposium on the Nondestructive Characterization of Materials, held in Montreal, Canada, July 21-23, 1986. The Proceedings are divided into eight sections, which reflect the multidisciplinary nature of characterizing materials nondestructively: Polymers and Composites, Ceramics and Powder Metallurgy, Metals, Layered Structures/Adhesive Bonds/Welding, Degradation/Aging, Texture/ Anisotropy, Stress, and New Techniques. Invited papers by R. Hadcock of Grumman Aircraft Systems, R. Cannon of Rutgers University, H. Yada of Nippon Steel and R. Bridenbaugh of Alcoa review respectively the processing of polymer matrix composites, ceramics, steel and aluminum, emphasizing the need for material property sensors to improve process and quality control. Two other invited papers, one by A. Wedgwood of Harwell and the other by P. Holler of the IzFP in Saarbrucken review state of the art techniques to characterize particulate matter and metals respectively.

Polyconjugated Materials

Polyconjugated Materials PDF Author: G. Zerbi
Publisher: Elsevier
ISBN: 0444596852
Category : Technology & Engineering
Languages : en
Pages : 454

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Book Description
In the past ten years the science of Polyconjugated Organic Materials has grown rapidly and is now experiencing the uncorrelated explosive development typical of a new science. The transfer of the basic scientific knowledge of these materials to the field of technology and industry is presently the focus of interest in academic and industrial circles. New devices are being developed which are paving the way for future technologies. Organic materials have become the focus of attention in these technologies. The large and very fast nonlinear optical response of organic molecules has generated new theoretical and experimental physics as well as new synthetic chemistry. The advancement of knowledge and the new achievements in this field require the interdisciplinary practice of chemists, physicists and engineers who can talk the same technical language on molecular systems which show specific physical properties. The purpose of this book is to introduce beginners to the field of nonlinear optics in organic materials and to expose specialists in one field to the problems of the other fields. Since organic molecules with a large and very fast nonlinear optical response are being continuously discovered the contributions focus on this class of materials. The volume provides a useful introduction for all those interested in the theoretical and experimental aspects of this expanding field.

Review of Progress in Quantitative Nondestructive Evaluation

Review of Progress in Quantitative Nondestructive Evaluation PDF Author: Donald O. Thompson
Publisher: Springer Science & Business Media
ISBN: 1461318939
Category : Technology & Engineering
Languages : en
Pages : 1790

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Book Description
This volume (Parts A and B) contains the edited papers presented at the annual Review of Progress in Quan?itative Nondestructive Evalua tion held at the University of California (San Diego) in LaJo11a, August 3-8, 1986. The Review was organized and sponsored by the Center for NDE at Iowa State University and the Ames Laboratory, in cooperation with the Office of Basic Energy Sciences, USDOE, and the Materia1s Laboratory at Wright-Patterson Air Force Base. Approximately 400 attendees, a new record, representing various government agencies, industry, and universities participated in the technical presentations, poster sessions, and discussions. This Review, with its wide-ranging interchange of technical information, stands as one of the most compre hensive in the field of NDE research and engineering. In order to present the reader with a more usefu1 document, we have organized the symposium papers in these Proceedings by subject rather than by the order of presentation at the Review. Topical subject headings have been selected under which the 1arge majority of papers wou1d reasonably falI. Here, again, we have revised the format used in former years to accommodate an evolving focus of interest in the field. These categories cover a broad spectrum of research in NDE and encompass activities from fundamental work to early engineering applications. In the following paragraphs we offer a brief summary of the research presented in these Proceedings.

Analytical Techniques for the Characterization of Compound Semiconductors

Analytical Techniques for the Characterization of Compound Semiconductors PDF Author: G. Bastard
Publisher: Elsevier
ISBN: 0444596720
Category : Science
Languages : en
Pages : 554

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Book Description
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.

C, H, N and O in Si and Characterization and Simulation of Materials and Processes

C, H, N and O in Si and Characterization and Simulation of Materials and Processes PDF Author: A. Borghesi
Publisher: Newnes
ISBN: 044459633X
Category : Technology & Engineering
Languages : en
Pages : 580

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Book Description
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Metals Abstracts

Metals Abstracts PDF Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 972

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Book Description