A Study of Radiation Damage and Annealing in Gallium Arsenide, Primarily by Diffuse Neutron Scattering PDF Download
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Author: Sanjay Gupta
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Languages : en
Pages :
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Author: Sanjay Gupta
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Category :
Languages : en
Pages :
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Author: Samuel C. Ling
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ISBN:
Category :
Languages : en
Pages : 15
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Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
Author: Joseph A. Bruening
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ISBN:
Category :
Languages : en
Pages : 126
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Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
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Category :
Languages : en
Pages : 0
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Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Author: Ming-Hsien Wu
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ISBN:
Category :
Languages : en
Pages : 58
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Author:
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ISBN:
Category :
Languages : en
Pages : 181
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Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E14 and 1E15 electrons/sq cm. The process of annealing included thermal annealing at 90 C with forward bias current and thermal annealing alone (for GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.
Author: Paul Durnford Taylor
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
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Author: Rodolfo A. Cesena
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Category : Alkali metal halides
Languages : en
Pages : 123
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A research program using the high dose rates available from an electron linear accelerator and fast optical techniques to study excitation-deexcitation, trapping, and radiation damage processes is presented. Radiation damage rates in gallium arsenide noncoherent and laser p-n junction diodes are compared by measuring the electrical characteristics and the electroluminescence output before and after irriation with fast electrons. A nonthermal, electrical annealing process is described which is effective in restoring the optical properties of irradiated diodes; the electrical characteristics, which are damaged by the radiation, are not restored by the anneal. To account for the various observations, a model is proposed in which the radiation does not introduce additional nonradiative recombination centers as previously thought but changes the radiative recombination centers to nonradiative. Potassium chloride is also investigated, and the shift in the peak absorption of the F-center with temperature is used to compute effective lattice frequencies. The self-bleaching of the F-centers and the energy required to form an F-center by ionization is experimentally determined as a function of initial F-center concentration and as a function of temperature. A value of 40 eV/F-center is measured at 300K at times of the order of microseconds after a radiation pulse; measurements a few seconds after the pulse yield a higher value due to the self-bleaching of the centers. (Author).
Author:
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Category : Dissertations, Academic
Languages : en
Pages : 656
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Author:
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Category : Nuclear energy
Languages : en
Pages : 1118
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