A Design Study on the Scaling Limit of Ultra-thin Silicon-on-insulator MOSFETs PDF Download
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Author: Wei-Yuan Lu
Publisher:
ISBN: 9781109879605
Category :
Languages : en
Pages : 124
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Book Description
As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is considered as a potential candidate for achieving 10-nm CMOS. Fully-depleted SOI MOSFETs have several inherent advantages over bulk MOSFETs-low junction capacitance, no body effect and no need for body doping to confine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs.
Author: Wei-Yuan Lu
Publisher:
ISBN: 9781109879605
Category :
Languages : en
Pages : 124
Get Book Here
Book Description
As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is considered as a potential candidate for achieving 10-nm CMOS. Fully-depleted SOI MOSFETs have several inherent advantages over bulk MOSFETs-low junction capacitance, no body effect and no need for body doping to confine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs.
Author: Anis Suhaila Mohd Zain
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 151
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Book Description
Author: Marijan Peršun
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 218
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 924
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Book Description
Author: Yee-Chia Yeo
Publisher:
ISBN:
Category :
Languages : en
Pages : 42
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Book Description
Author: Juin J. Liou
Publisher: CRC Press
ISBN: 1466511702
Category : Science
Languages : en
Pages : 271
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Book Description
This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Author: Alexander Starikov
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9780819448477
Category : Computers
Languages : en
Pages : 434
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Book Description
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 414
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740
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Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1351833359
Category : Technology & Engineering
Languages : en
Pages : 602
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Book Description
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
