Point and Extended Defects in Semiconductors

Point and Extended Defects in Semiconductors PDF Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286

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Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Point and Extended Defects in Semiconductors

Point and Extended Defects in Semiconductors PDF Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286

Get Book Here

Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

A Contribution to the Study of Extended-defects in Semiconductors

A Contribution to the Study of Extended-defects in Semiconductors PDF Author: Nirmal David Theodore
Publisher:
ISBN:
Category :
Languages : en
Pages : 858

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Book Description


Extended Defects in Semiconductors

Extended Defects in Semiconductors PDF Author: D. B. Holt
Publisher: Cambridge University Press
ISBN: 1139463594
Category : Science
Languages : en
Pages : 625

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Book Description
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Extended Defects in Semiconductors

Extended Defects in Semiconductors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 142

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Book Description


Papers Presented at the European Research Conference on Extended Defects in Semiconductors

Papers Presented at the European Research Conference on Extended Defects in Semiconductors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 367

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Book Description


Papers presented at the European Research Conference on Extended Defects in Semiconductors

Papers presented at the European Research Conference on Extended Defects in Semiconductors PDF Author: European Research Conference on Extended Defects in Semiconductors (1992, Holzhau, Freiberg)
Publisher:
ISBN:
Category :
Languages : en
Pages : 366

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Book Description


Extended Defects in Semiconductors

Extended Defects in Semiconductors PDF Author: D. B. Holt
Publisher:
ISBN: 9780511321719
Category : Electronic book
Languages : en
Pages : 631

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Book Description


Extended Defects in Semiconductors

Extended Defects in Semiconductors PDF Author: A Calvallini
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Point and Extended Defects in Semiconductors

Point and Extended Defects in Semiconductors PDF Author: G. Benedek
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Identification of Defects in Semiconductors

Identification of Defects in Semiconductors PDF Author:
Publisher: Academic Press
ISBN: 008086449X
Category : Science
Languages : en
Pages : 449

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Book Description
GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.