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Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 1394202466
Category : Technology & Engineering
Languages : en
Pages : 469
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Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 1394202466
Category : Technology & Engineering
Languages : en
Pages : 469
Get Book
Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 1040113117
Category : Technology & Engineering
Languages : en
Pages : 419
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Book Description
The fifth volume in Jenny Stanford Series on Intelligent Nanosystems, entitled Outlooking Beyond Nanoelectronics and Nanosystems: Ultra Scaling, Pervasiveness, Sustainable Integration, and Biotic Cross-Inspiration, collects global reviews on (1) the historical cross-inspiration of technologies with nature, their evolution towards nanoelectronic and nanosystem components and their sustainability; (2) new materials, techniques, and pervasive applications out of mainstream; and (3) memristor foundation and new bioengineering developments. The covered topics include ultra scaling with its limits, alternatives and prospects, superior energy efficiency and pervasiveness to non-conventional applications; the evaluation of information technology sustainability, environmental impact and life cycles; prospective fabrication techniques, materials and components, their multifunctional extensions for characterization, fabrication, high-resolution quantum sensing, energy and information storage; life science–inspired memristors and edge of chaos; and bioengineering by nanostructured hybrid smart systems.
Author: Jagadesh Kumar Mamidala
Publisher: John Wiley & Sons
ISBN: 111924630X
Category : Technology & Engineering
Languages : en
Pages : 208
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Book Description
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Author: Shubham Sahay
Publisher: John Wiley & Sons
ISBN: 1119523524
Category : Technology & Engineering
Languages : en
Pages : 619
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Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Author: Tsu-Jae King Liu
Publisher: Cambridge University Press
ISBN: 1107043182
Category : Computers
Languages : en
Pages : 439
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Book Description
Get up to speed with the future of logic switch design with this indispensable introduction to post-CMOS technologies.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1119594421
Category : Science
Languages : en
Pages : 470
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Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: Kevin Maney
Publisher: Pearson Education
ISBN: 0132755130
Category : Business & Economics
Languages : en
Pages : 495
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Book Description
Thomas J Watson Sr’s motto for IBM was THINK, and for more than a century, that one little word worked overtime. In Making the World Work Better: The Ideas That Shaped a Century and a Company, journalists Kevin Maney, Steve Hamm, and Jeffrey M. O’Brien mark the Centennial of IBM’s founding by examining how IBM has distinctly contributed to the evolution of technology and the modern corporation over the past 100 years. The authors offer a fresh analysis through interviews of many key figures, chronicling the Nobel Prize-winning work of the company’s research laboratories and uncovering rich archival material, including hundreds of vintage photographs and drawings. The book recounts the company’s missteps, as well as its successes. It captures moments of high drama – from the bet-the-business gamble on the legendary System/360 in the 1960s to the turnaround from the company’s near-death experience in the early 1990s. The authors have shaped a narrative of discoveries, struggles, individual insights and lasting impact on technology, business and society. Taken together, their essays reveal a distinctive mindset and organizational culture, animated by a deeply held commitment to the hard work of progress. IBM engineers and scientists invented many of the building blocks of modern information technology, including the memory chip, the disk drive, the scanning tunneling microscope (essential to nanotechnology) and even new fields of mathematics. IBM brought the punch-card tabulator, the mainframe and the personal computer into the mainstream of business and modern life. IBM was the first large American company to pay all employees salaries rather than hourly wages, an early champion of hiring women and minorities and a pioneer of new approaches to doing business--with its model of the globally integrated enterprise. And it has had a lasting impact on the course of society from enabling the US Social Security System, to the space program, to airline reservations, modern banking and retail, to many of the ways our world today works. The lessons for all businesses – indeed, all institutions – are powerful: To survive and succeed over a long period, you have to anticipate change and to be willing and able to continually transform. But while change happens, progress is deliberate. IBM – deliberately led by a pioneering culture and grounded in a set of core ideas – came into being, grew, thrived, nearly died, transformed itself... and is now charting a new path forward for its second century toward a perhaps surprising future on a planetary scale.
Author: Andrei Grebennikov
Publisher: McGraw Hill Professional
ISBN: 0071782990
Category : Technology & Engineering
Languages : en
Pages : 433
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Book Description
This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.
Author: Rakesh Kumar
Publisher: McGraw Hill Professional
ISBN: 0071642706
Category : Technology & Engineering
Languages : en
Pages : 358
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Book Description
Discover How to Launch and Succeed as a Fabless Semiconductor Firm Fabless Semiconductor Implementation takes you step-by-step through the challenges faced by fabless firms in the development of integrated circuits. This expert guide examines the potential pitfalls of IC implementation in the rapidly growing fabless segment of the semiconductor industry and elaborates how to overcome these difficulties. It provides a comprehensive overview of the issues that executives and technical professionals encounter at fabless companies. Filled with over 150 on-target illustrations, this business-building tool presents a clear picture of the entire lifecycle of a fabless enterprise, describing how to envision and execute fabless IC implementation. Inside This Comprehensive Guide to Fabless IC Design - Define and specify the product Understand the customer requirements, the value chain, and the supply chain Select the right implementation approach, including “make” vs. “buy” Choose the best technologies and supply chain Implement IC design, fabrication, and manufacturing Build the operations infrastructure to meet cost and quality requirements Program-manage the distributed supply chain
