1995 IEEE International Conference on Microelectronic Test Structures PDF Download
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Author: IEEE Electron Devices Society
Publisher: IEEE
ISBN: 9780780320659
Category : Technology & Engineering
Languages : en
Pages : 304
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Book Description
Author: IEEE Electron Devices Society
Publisher: IEEE
ISBN: 9780780320659
Category : Technology & Engineering
Languages : en
Pages : 304
Get Book
Book Description
Author:
Publisher: IEEE
ISBN: 9780780320666
Category : Technology & Engineering
Languages : en
Pages : 304
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Book Description
Author: International Conference on Microelectronic Test Structures
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
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Book Description
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 160
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Book Description
Author: National Semiconductor Metrology Program (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 136
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
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Book Description
Author: Alain C. Diebold
Publisher: CRC Press
ISBN: 0203904540
Category : Technology & Engineering
Languages : en
Pages : 703
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Book Description
Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
Author: David Binkley
Publisher: John Wiley & Sons
ISBN: 047003369X
Category : Technology & Engineering
Languages : en
Pages : 632
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Book Description
Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Author: Piet Wambacq
Publisher: Springer Science & Business Media
ISBN: 147575003X
Category : Technology & Engineering
Languages : en
Pages : 528
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Book Description
The analysis and prediction of nonlinear behavior in electronic circuits has long been a topic of concern for analog circuit designers. The recent explosion of interest in portable electronics such as cellular telephones, cordless telephones and other applications has served to reinforce the importance of these issues. The need now often arises to predict and optimize the distortion performance of diverse electronic circuit configurations operating in the gigahertz frequency range, where nonlinear reactive effects often dominate. However, there have historically been few sources available from which design engineers could obtain information on analysis tech niques suitable for tackling these important problems. I am sure that the analog circuit design community will thus welcome this work by Dr. Wambacq and Professor Sansen as a major contribution to the analog circuit design literature in the area of distortion analysis of electronic circuits. I am personally looking forward to hav ing a copy readily available for reference when designing integrated circuits for communication systems.
