X-ray Topography and Crystal Characterization PDF Download
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Author: David Keith Bowen
Publisher:
ISBN:
Category : X-ray crystallography
Languages : en
Pages : 236
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Book Description
Author: David Keith Bowen
Publisher:
ISBN:
Category : X-ray crystallography
Languages : en
Pages : 236
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Book Description
Author: B.K. Tanner
Publisher: Springer Science & Business Media
ISBN: 1475711263
Category : Science
Languages : en
Pages : 615
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Book Description
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
Author: B. K. Tanner
Publisher: Elsevier
ISBN: 1483187683
Category : Science
Languages : en
Pages : 189
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Book Description
X-Ray Diffraction Topography presents an elementary treatment of X-ray topography which is comprehensible to the non-specialist. It discusses the development of the principles and application of the subject matter. X-ray topography is the study of crystals which use x-ray diffraction. Some of the topics covered in the book are the basic dynamical x-ray diffraction theory, the Berg-Barrett method, Lang’s method, double crystal methods, the contrast on x-ray topography, and the analysis of crystal defects and distortions. The crystals grown from solution are covered. The naturally occurring crystals are discussed. The text defines the meaning of melt, solid state and vapour growth. An analysis of the properties of inorganic crystals is presented. A chapter of the volume is devoted to the characteristics of metals. Another section of the book focuses on the production of ice crystals and the utilization of oxides as laser materials. The book will provide useful information to chemists, scientists, students and researchers.
Author: D.K. Bowen
Publisher: CRC Press
ISBN: 0203979192
Category : Technology & Engineering
Languages : en
Pages : 263
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Book Description
The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization
Author: Majed Saeed Alourfi
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Eric Lifshin
Publisher: John Wiley & Sons
ISBN: 3527613757
Category : Technology & Engineering
Languages : en
Pages : 277
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Book Description
Linking of materials properties with microstructures is a fundamental theme in materials science, for which a detailed knowledge of the modern characterization techniques is essential. Since modern materials such as high-temperature alloys, engineering thermoplastics and multilayer semiconductor films have many elemental constituents distributed in more than one phase, characterization is essential to the systematic development of such new materials and understanding how they behave in practical applications. X-ray techniques play a major role in providing information on the elemental composition and crystal and grain structures of all types of materials. The challenge to the materials characterization expert is to understand how specific instruments and analytical techniques can provide detailed information about what makes each material unique. The challenge to the materials scientist, chemist, or engineer is to know what information is needed to fully characterize each material and how to use this information to explain its behavior, develop new and improved properties, reduce costs, or ensure compliance with regulatory requirements. This comprehensive handbook presents all the necessary background to understand the applications of X-ray analysis to materials characterization with particular attention to the modern approach to these methods.
Author: B.K. Tanner
Publisher: Springer
ISBN: 9780306406287
Category : Science
Languages : en
Pages : 589
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Book Description
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
Author: Govindhan Dhanaraj
Publisher: Springer Science & Business Media
ISBN: 3540747613
Category : Science
Languages : en
Pages : 1823
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Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ([Delta]d/d) on the order of 10−5. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.
Author: Mark Ladd
Publisher: Springer Science & Business Media
ISBN: 146143954X
Category : Science
Languages : en
Pages : 784
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Book Description
The advances in and applications of x-ray and neutron crystallography form the essence of this new edition of this classic textbook, while maintaining the overall plan of the book that has been well received in the academic community since the first edition in 1977. X-ray crystallography is a universal tool for studying molecular structure, and the complementary nature of neutron diffraction crystallography permits the location of atomic species in crystals which are not easily revealed by X-ray techniques alone, such as hydrogen atoms or other light atoms in the presence of heavier atoms. Thus, a chapter discussing the practice of neutron diffraction techniques, with examples, broadens the scope of the text in a highly desirable way. As with previous editions, the book contains problems to illustrate the work of each chapter, and detailed solutions are provided. Mathematical procedures related to the material of the main body of the book are not discussed in detail, but are quoted where needed with references to standard mathematical texts. To address the computational aspect of crystallography, the suite of computer programs from the fourth edition has been revised and expanded. The programs enable the reader to participate fully in many of the aspects of x-ray crystallography discussed in the book. In particular, the program system XRAY* is interactive, and enables the reader to follow through, at the monitor screen, the computational techniques involved in single-crystal structure determination, albeit in two dimensions, with the data sets provided. Exercises for students can be found in the book, and solutions are available to instructors.
