Author: Tianyu Chen
Publisher:
ISBN:
Category : Electric current converters
Languages : en
Pages :
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Book Description
Power electronics converters have been widely applied to motor drive systems to decrease the energy consumption by allowing for variable frequency operation. With the requirement of carbon emission reduction, variable frequency drive system will become a trend in the future. Conventional power converters employ Silicon IGBT and are physically separated from the electric machines. With the development of wide bandgap power semiconductors, such as SiC MOSFET and GaN HEMT, it becomes possible to build high temperature, high power density converter and integrate the power converter directly into housing of the motors. However, because of the limited space, high temperature, and high magnetic flux density inside electric machines, integration of power converter into a motor becomes a challenging work. This study presents the research on high power density converter and the integration of power converter into an induction motor. In this study, two prototypes of GaN HEMT-based power converter are built and integrated into a 3-hp induction motor. The PCB layout of power stage is investigated and optimized. The leakage magnetic flux on the surface of the power converter is simulated and experimentally measured. To facilitate the thermal dissipation of the power converter, the motor endcap is redesigned and the thermal analysis is performed for the integrated motor drive system as a whole. The topologies of power converter with an active front-end rectifier are investigated and compared, and the totem-pole rectifier with power pulsation buffer is selected as the front-end stage. With the GaN converter integrated into the induction motor, the variable frequency operation of the integrated motor drive system is validated through experimental test..
Author: Hang Dai
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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This research program has investigated the introduction of wide bandgap (WBG) power semiconductor switches into current-source inverters (CSIs) to achieve several performance advantages over conventional voltage-source inverters (VSIs) in motor drive applications, with a particular focus on integrated motor drives (IMDs).A detailed analysis comparing two-level CSIs and two-level VSIs using WBG devices is presented, showing that CSIs offer several advantages over the baseline VSI topology when WBG devices are introduced at high switching frequencies. These include sinusoidal output voltage and current waveforms, improved compatibility with elevated temperature operation, lower leakage current and conducted common-mode (CM) electromagnetic interference (EMI), and high power density values that make them appealing for IMD applications. However, CSIs require switches with reverse-voltage-blocking (RVB) capability. In the absence of monolithic RVB switch devices, several hybrid switch configurations are presented that provide this RVB capability as reverse-blocking (RB) or bidirectional (BD) switches. Several CSI topologies and modulation algorithms are presented using these switches. A new space vector pulsewidth modulation (SVPWM) algorithm is proposed for the conventional CSI topology (H6-CSI) using six BD switches that prevents transient current spikes and voltage pulses. A new modulation scheme is proposed that enables the H7-CSI topology using six BD switches and one RB switch to achieve higher efficiency. A new high-efficiency CSI topology (H8-CSI) using six BD switches is proposed that adds an eighth active switch to the H7-CSI topology, enabling simplified gate signals. Analysis and suppression of CM-EMI in WBG-CSIs have been investigated. A new equivalent circuit (EQC) that can accurately and rapidly predict the CM-EMI frequency spectra is proposed. The CM-EMI of a three-phase current-source converter (CSC) system consisting of both rectifier and inverter stages has also been evaluated using an extended EQC. These EQCs have been successfully utilized to analyze and suppress the CM-EMI spectral envelopes in both CSIs and CSCs. Finally, a high-performance WBG-CSI integrated into the housing of a 3kW PM synchronous motor has been developed and tested. The measured performance of the CSI-IMD confirms the CSI's ability to simultaneously achieve high efficiency, high power density, and low CM-EMI while delivering high-quality sinusoidal motor excitation waveforms.
Author:
Publisher:
ISBN:
Category : Electric current converters
Languages : en
Pages : 0
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Wide bandgap (WBG) semiconductor materials allow higher power and voltage, faster and more reliable power electronic devices. These characteristics lead to a massive improvement in power converters, especially for electric vehicles (EV) applications. As a result, new opportunities for high efficiency and power density is coming with the development of WBG power semiconductor. This paper introduces the application of WBG devices in power converters of EV. The EV development trend and the related circuit diagram of an EV system have been introduced. Serval typical power converters' topologies have been discussed. Meanwhile, WBG devices also bring challenges to a high voltage and frequency design. High current and voltage levels need a more powerful heating system. A higher switching speed requires lower loop parasitic inductance. This paper discusses how to apply WBG devices in the power converter design and address these challenges. Finally, The reliability test method of power converters has been discussed. The lifetime of all components in a power converter has been tested under different voltage and temperature levels. The failure reasons and influences parameters are analyzed.
Author: Douglas Pappis
Publisher: BoD – Books on Demand
ISBN: 3737609772
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Integrated modular motor drive (IMMD) is a concept that integrates both the motor and the drive into a single package. Without extra connecting cables and drive cabinet, the drive system can achieve higher power density and better integration with plug & play capability. However, the physical integration of motor drive and the machine poses many challenges, including thermal management and size minimization. The concept of multilevel converter is able to reduce voltage stress on semiconductor devices, and consequently, provides higher efficiency. This greatly reduces the difficulty of thermal management. However, traditional multilevel topologies have extra inductors, transformers or bulky capacitors and cannot meet the size requirement of IMMD. In this thesis, a multilevel topology is proposed to realize IMMD. Similar to other multilevel topologies, the proposed one utilizes semiconductor devices with lower voltage stress and better efficiency. Different from other multilevel topologies, the proposed one treats the machine as a critical magnetic component to provide galvanic isolation, so there is no extra transformer or inductor in the proposed topology. Consequently, the size, weight and cost of the converter can be reduced. It is also proposed in this thesis to build an IMMD with wide bandgap gallium nitride (GaN) field effect transistors (FETs) to deal with the high temperature environment inside machine housing. In addition, GaN FETs can achieve a higher switching frequency that allows further reduction of capacitor size. This thesis will present technical details of the proposed multilevel topology, including topology comparisons, component sizing and machine winding configurations. To give a better understanding of the converter dynamic, both the analytical model of machine windings and control algorithms are presented. Evaluations of capacitors are also provided to minimize the capacitor size for a machine drive. In addition, this thesis includes various hardware design experiences. A 4-module (i.e. equivalent 5-level) prototype converter with indirect field oriented control (IFOC) is designed and it validates the proposed multilevel concept. An optimized IMMD physical structure is proposed to minimize the size and thickness of the design. Experiment results and design experience of a GaN FETs IMMD are also presented. Through four generations of hardware design, this thesis proves that the proposed multilevel topology and GaN FETs can realize an IMMD with higher power density and fully physical integration.
Author: Keng C. Wu
Publisher: Academic Press
ISBN: 9780128042984
Category :
Languages : en
Pages : 408
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Book Description
Power Converter with Digital Filter Feedback Control presents a logical sequence that leads to the identification, extraction, formulation, conversion, and implementation for the control function needed in electrical power equipment systems. This book builds a bridge for moving a power converter with conventional analog feedback to one with modern digital filter control and enlists the state space averaging technique to identify the core control function in analytical, close form in s-domain (Laplace). It is a useful reference for all professionals and electrical engineers engaged in electrical power equipment/systems design, integration, and management. Offers logical sequences to identification, extraction, formulation, conversion, and implementation for the control function needed Contains step-by-step instructions on how to take existing analog designed power processors and move them to the digital realm Presents ways to extract gain functions for many power converters' power processing stages and their supporting circuitry
Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 418
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Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author: Jungwon Choi
Publisher:
ISBN:
Category :
Languages : en
Pages :
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As demand for electric vehicles (EVs) grows, wireless power transfer (WPT) technology becomes beneficial by removing the need for manual intervention to charge EV batteries. These high-power applications require power electronics systems that not only efficiently deliver sufficient power, but are also small enough to be embedded in the EV. However, while the size of other vehicle components has shrunk considerably over the past decade, that of power electronics systems has not. This presents a major challenge to making power electronics systems for EVs, plasma generation and other high-power industrial applications both efficient and small. This dissertation describes the design and implementation of efficient, compact power electronics systems for charging EVs and other industrial applications, as well as their extensions to WPT. A large part of this work involves overcoming technical limitations by designing high-power (above 2 kW) and high-efficiency (above 90%) systems to operate at tens of MHz switching frequency. First, wide bandgap (WBG) devices such as silicon carbide (SiC) MOSFETs or enhancement mode gallium nitride (eGaN) FETs are used to reduce the size and weight of the entire WPT system and improve system performance. With SiC MOSFETs and eGaN FETs, 2 kW resonant inverters and resonant rectifiers for WPT systems can successfully operate at 13.56 MHz switching frequency. Thus, this work opens up the possibility of achieving kilowatt-level output powers at MHz switching frequencies. After implementing a high-efficiency resonant inverter for the WPT system, the coupling coils must be designed very carefully to deliver power with high efficiency over a mid-range coil distance. Therefore, an open-type four-coil unit is also presented in this work. The advantage of the coils is that the resonant frequency can be changed by adjusting the length of copper wire and distance between two coils. Using this type of coil unit eliminates the need for external capacitors that incur additional losses. However, even when the coupling coils are designed and implemented perfectly to provide high efficiency, the WPT system performance may decrease because of misalignments between the transmitting and receiving coils. Specifically, resonant converters are sensitive to load variation, which increases losses in switching devices. The impedance of magnetic resonant coupling (MRC) coils seen by inverters can be easily changed according to the distance or alignment between transmitting and receiving coils. This is one of the main factors that degrades the overall efficiency of WPT systems. To overcome this issue, this dissertation introduces a new kind of matching network, called an impedance compression network (ICN), to maintain the robustness of coil efficiency in various coil positions. An ICN consisting of a resistance compression network (RCN) and a phase compression network (PCN) was designed and implemented to compensate for distance and alignment variations between coils in a WPT system. Using an ICN helps maintain zero voltage switching (ZVS) and zero dv/dt operation in a resonant inverter and achieve system performance of over 90% efficiency. While WPT systems offer a convenient way to enable high-power applications, a critical unresolved concern is the safety of these systems. This dissertation presents two safety guidelines for EMF exposure and previous studies that evaluate human exposure level compared to the values recommended in the regulations. However, the limits of human exposure to electric, magnetic and electromagnetic fields in high-power WPT systems have not been clearly demonstrated yet. Based on the guidelines and the previous research, future research is required to evaluate EMF exposure in high-frequency, high-power WPT systems. One of the challenges in designing WPT systems for EVs is the need to combine power amplifiers to obtain higher power levels. To address this problem, this dissertation proposes a power-combining resonant inverter that can be applied not only to WPT systems, but also plasma generation and other industrial applications. Current RF power amplifiers for plasma generation operate at very high frequency (VHF), but provide low efficiency around 70% because they use linear amplifier topologies. Using a resonant inverter with WBG devices provides high power while maintaining high efficiency in a 40.68 MHz plasma-generation system. However, WBG devices cannot effectively dissipate heat at frequencies above 40 MHz. To reduce the losses in each eGaN FET, a power-combining inverter based on a class Phi2 inverter is designed and implemented to provide 1.2 kW output power at 40.68 MHz. A configurable method used to tune a class Phi2 inverter allows us to easily connect four of them in parallel to create a power-combining inverter that can achieve up to 1.2 kW output power. Also, the proposed inverter topology reduces the power loss in each switching device, improving the power density of the resonant inverter. In conclusion, this dissertation proposes high-frequency, high-power resonant converters with WBG devices to improve the power density and efficiency of both WPT and plasma generation systems. Furthermore, it presents a novel ICN topology that mitigates misalignment problems caused by MRC coils.
Author: Dorin O. Neacsu
Publisher: CRC Press
ISBN: 1420015532
Category : Technology & Engineering
Languages : en
Pages : 385
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Book Description
Power converters are at the heart of modern power electronics. From automotive power systems to propulsion for large ships, their use permeates through industrial, commercial, military, and aerospace applications of various scales. Having reached a point of saturation where we are unlikely to see many new and revolutionary technologies, industry no
