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Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217817
Category : Technology & Engineering
Languages : en
Pages : 491
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Book Description
VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217817
Category : Technology & Engineering
Languages : en
Pages : 491
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Book Description
VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Author: Krishna Shenai
Publisher: Artech House Publishers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 548
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Book Description
This comprehensive collection of reprinted articles presents the most important developments on VLSI contact and interconnect technologies and applications. The book covers important developments in metallization of compound semiconductor technologies, and includes a section on metallization reliability and high speed testing.
Author: L. B. Rothman
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 288
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Book Description
Author: Akio Hiraki
Publisher: IOS Press
ISBN: 9784274900396
Category : Technology & Engineering
Languages : en
Pages : 422
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Book Description
Author: Konstantin Moiseev
Publisher: Springer
ISBN: 1461408210
Category : Technology & Engineering
Languages : en
Pages : 245
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Book Description
This book covers layout design and layout migration methodologies for optimizing multi-net wire structures in advanced VLSI interconnects. Scaling-dependent models for interconnect power, interconnect delay and crosstalk noise are covered in depth, and several design optimization problems are addressed, such as minimization of interconnect power under delay constraints, or design for minimal delay in wire bundles within a given routing area. A handy reference or a guide for design methodologies and layout automation techniques, this book provides a foundation for physical design challenges of interconnect in advanced integrated circuits.
Author: Shubham Kumar
Publisher: CRC Press
ISBN: 1000396401
Category : Technology & Engineering
Languages : en
Pages : 353
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Book Description
This book covers theoretical and practical aspects of all major steps in the fabrication sequence. This book can be used conveniently in a semester length course on integrated circuit fabrication. This text can also serve as a reference for practicing engineer and scientist in the semiconductor industry. IC Fabrication are ever demanding of technology in rapidly growing industry growth opportunities are numerous. A recent survey shows that integrated circuit currently outnumber humans in UK, USA, India and China. The spectacular advances in the development and application of integrated circuit technology have led to the emergence of microelectronic process engineering as an independent discipline. Integrated circuit fabrication text books typically divide the fabrication sequence into a number of unit processes that are repeated to form the integrated circuit. The effect is to give the book an analysis flavor: a number of loosely related topics each with its own background material. Note: T& F does not sell or distribute the Hardback in India, Pakistan, Nepal, Bhutan, Bangladesh and Sri Lanka.
Author: Simon S. Cohen
Publisher: Academic Press
ISBN: 1483217795
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Author: Yasuo Tarui
Publisher: Springer Science & Business Media
ISBN: 3642691927
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
The origin of the development of integrated circuits up to VLSI is found in the invention of the transistor, which made it possible to achieve the ac tion of a vacuum tube in a semiconducting solid. The structure of the tran sistor can be constructed by a manufacturing technique such as the intro duction of a small amount of an impurity into a semiconductor and, in ad dition, most transistor characteristics can be improved by a reduction of dimensions. These are all important factors in the development. Actually, the microfabrication of the integrated circuit can be used for two purposes, namely to increase the integration density and to obtain an improved perfor mance, e. g. a high speed. When one of these two aims is pursued, the result generally satisfies both. We use the Engl ish translation "very large scale integration (VLSIl" for "Cho LSI" in Japanese. In the United States of America, however, similar technology is bei ng developed under the name "very hi gh speed integrated circuits (VHSIl". This also originated from the nature of the integrated circuit which satisfies both purposes. Fortunately, the Japanese word "Cho LSI" has a wider meani ng than VLSI, so it can be used ina broader area. However, VLSI has a larger industrial effect than VHSI.
Author: S. P. Murarka
Publisher: Butterworth-Heinemann
ISBN:
Category : Computers
Languages : en
Pages : 268
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Book Description
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
Author: Ashok K. Goel
Publisher: John Wiley & Sons
ISBN: 0470165960
Category : Technology & Engineering
Languages : en
Pages : 433
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Book Description
This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.
