Author: Eugene T. Fitzgibbons
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 141
Book Description
Thin films of TiO2 are grown in a low temperature (150C) vapor deposition process by hydrolyzing tetraisopropyl titanate at the substrate. These films can be made uniform over a 1-1/4 in substrate to within 100 A and are found to be amorphous in the 'as grown' condition. Films in the amorphous state have an index of refraction of 2.0 and can be etched easily (50 A/sec) in 0.5% HF. Annealing in air at 350C converts the film to the anatase tetragonal crystalline form and at 700C to a mixture of anatase and rutile. Both forms are quite etch resistant, but the anatase can be etched by HF and warm H2SO4. At 1000C, the film is completely rutile with an index of refraction of 2.5. This form is extremely etch resistant even in 120C H2SO4 (1000 A/hour). The conversion from amorphous to rutile is accompanied by a thickness decrease of 36%. (Author).
Vapor Deposited Titanium Dioxide Thin Films
Author: Eugene T. Fitzgibbons
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 141
Book Description
Thin films of TiO2 are grown in a low temperature (150C) vapor deposition process by hydrolyzing tetraisopropyl titanate at the substrate. These films can be made uniform over a 1-1/4 in substrate to within 100 A and are found to be amorphous in the 'as grown' condition. Films in the amorphous state have an index of refraction of 2.0 and can be etched easily (50 A/sec) in 0.5% HF. Annealing in air at 350C converts the film to the anatase tetragonal crystalline form and at 700C to a mixture of anatase and rutile. Both forms are quite etch resistant, but the anatase can be etched by HF and warm H2SO4. At 1000C, the film is completely rutile with an index of refraction of 2.5. This form is extremely etch resistant even in 120C H2SO4 (1000 A/hour). The conversion from amorphous to rutile is accompanied by a thickness decrease of 36%. (Author).
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 141
Book Description
Thin films of TiO2 are grown in a low temperature (150C) vapor deposition process by hydrolyzing tetraisopropyl titanate at the substrate. These films can be made uniform over a 1-1/4 in substrate to within 100 A and are found to be amorphous in the 'as grown' condition. Films in the amorphous state have an index of refraction of 2.0 and can be etched easily (50 A/sec) in 0.5% HF. Annealing in air at 350C converts the film to the anatase tetragonal crystalline form and at 700C to a mixture of anatase and rutile. Both forms are quite etch resistant, but the anatase can be etched by HF and warm H2SO4. At 1000C, the film is completely rutile with an index of refraction of 2.5. This form is extremely etch resistant even in 120C H2SO4 (1000 A/hour). The conversion from amorphous to rutile is accompanied by a thickness decrease of 36%. (Author).
Chemical Vapor Deposition and Characterization of Titanium Dioxide Thin Films
Author: David Christopher Gilmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Vapor Deposited Titanium Dioxide Thin Films
Author: D. R. Chick
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 141
Book Description
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 141
Book Description
Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and in Situ Characterization of Nanoscale Titanium Dioxide Films
Author: Polly Wanda Chu
Publisher:
ISBN:
Category :
Languages : en
Pages : 434
Book Description
Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Publisher:
ISBN:
Category :
Languages : en
Pages : 434
Book Description
Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Low Pressure Metal Organic Chemical Vapor Deposition of Titanium Dioxide Thin Films in Conjunction with Photocatalytic Investigations
Author: Abon Jason Manuel del Rosario
Publisher:
ISBN:
Category :
Languages : en
Pages : 324
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 324
Book Description
Photocatalytically Active and Optically Transparent Titanium Dioxide Thin Films Prepared by Ion Assisted Physical Vapor Deposition
Author: Redouan Boughaled el Lakhmissi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
An Examination of Precursor Chemistry and Its Effect on Microstructure Development in Chemical Vapor Deposition of Titanium Dioxide and Aluminum Thin Films
Author: Charles John Taylor
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Thin Film Titanium Dioxide by Chemical Vapor Deposition
Author: Dale Ralph Harbison
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 102
Book Description
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 102
Book Description
Titanium Dioxide TiO2 Thin Film Deposition by Using Chemical-vapor Deposition (CVD) Technique
Author:
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 49
Book Description
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 49
Book Description
Plasma Enhanced Chemical Vapor Deposition of Titanium Oxide Thin Films for Dielectric Applicaitons
Author: Wenli Yang
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 298
Book Description
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 298
Book Description