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Author: Eishi H. Ibe
Publisher: John Wiley & Sons
ISBN: 1118479297
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms Covers both terrestrial and avionic-level conditions Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary Written by a widely-recognized authority in soft-errors in electronic devices Code samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.
Author: Eishi H. Ibe
Publisher: John Wiley & Sons
ISBN: 1118479297
Category : Technology & Engineering
Languages : en
Pages : 292
Get Book Here
Book Description
This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms Covers both terrestrial and avionic-level conditions Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary Written by a widely-recognized authority in soft-errors in electronic devices Code samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.
Author: Chih-Hang Tung
Publisher: John Wiley & Sons
ISBN: 9780471457725
Category : Technology & Engineering
Languages : en
Pages : 688
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Book Description
More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
Author: C. Y. Chang
Publisher: Wiley-Interscience
ISBN: 9780471240679
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes: * The physics and operational characteristics of the different components * The evolution of device structures the ultimate limitations on device and circuit performance * Device miniaturization and simulation * Issues of reliability and the hot carrier effect * Digital and analog circuit building blocks
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Author: C. Y. Chang
Publisher: McGraw-Hill Science, Engineering & Mathematics
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 756
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Book Description
"This text follows the tradition of Sze's highly successful pioneering text on VLSI technology and is updated with the latest advances in the field of microelectronic chip fabrication. Since computer chips are foundations of modern electronics, these topics are essential for the next generation of USLI technologies, allowing more transistors to be packaged on a single chip. Contributing to each chapter are industry experts, specializing in topics such as epitaxy with low temperature process, rapid thermal processes, low damage plasma reactive ion etching, fine line litography, cleaning technology, clean room technology, packing and reliability."--
Author: V. K. Jain
Publisher: Springer Science & Business Media
ISBN: 3319030027
Category : Science
Languages : en
Pages : 841
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Book Description
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Author: Yosi Shacham-Diamand
Publisher: Springer Science & Business Media
ISBN: 0387958681
Category : Science
Languages : en
Pages : 545
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Book Description
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Author: Cher Ming Tan
Publisher: World Scientific
ISBN: 9814273325
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773751
Category : Science
Languages : en
Pages : 538
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 800
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Book Description
