Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes PDF Download
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Author: Pietro della Casa
Publisher: Cuvillier Verlag
ISBN: 3736963971
Category : Science
Languages : en
Pages : 252
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Book Description
This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.
Author: Pietro della Casa
Publisher: Cuvillier Verlag
ISBN: 3736963971
Category : Science
Languages : en
Pages : 252
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Book Description
This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.
Author:
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ISBN:
Category : Physics
Languages : en
Pages : 828
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Book Description
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ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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Book Description
Author: Geert Morthier
Publisher: Artech House
ISBN: 1608077012
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
Since the first edition of this book was published in 1997, the photonics landscape has evolved considerably and so has the role of distributed feedback (DFB) laser diodes. Although tunable laser diodes continue to be introduced in advanced optical communication systems, DFB laser diodes are still widely applied in many deployed systems. This also includes wavelength tunable DFB laser diodes and DFB laser diode arrays, usually integrated with intensity or phase modulators and semiconductor optical amplifiers. This valuable resource gives professionals a comprehensive description of the different effects that determine the behavior of a DFB laser diode. Special attention is given to two new chapters on wavelength tunable DFB laser diodes and bistable and unstable DFB laser diodes. Among many other updates throughout the reference, semi-conductor and electromagnetic professionals are also provided two new appendices. This book fully covers the underlying theory, commercial applications, necessary design criteria, and future direction of this technology.
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Category : Aeronautics
Languages : en
Pages : 980
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Book Description
Author: Norbert Grote
Publisher: Springer Science & Business Media
ISBN: 9783540669777
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.
Author: Roland Diehl
Publisher: Springer Science & Business Media
ISBN: 3540478523
Category : Science
Languages : en
Pages : 420
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Book Description
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.
Author: Masahiko Fujiwara
Publisher: Elsevier
ISBN: 0080481698
Category : Technology & Engineering
Languages : en
Pages : 703
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Book Description
WDM Technologies: Active Optical Components is an excellent resource for engineers and researchers engaged in all aspects of fiber optics communication, such as, optoelectronics, equipment/system design, and manufacturing. The book is also a resource for graduate students and scholars interested in these rapidly growing fields. - Provides the reader with insight and understanding for key active optical components frequently being / to be used in the optical communication systems, essential building blocks of today's/next generation fiber optic networks - Allows engineers working in optical communication area, (from system to component) to understand the principle and mechanics of each key component they deal with for optical system design - Covers different laser diodes as transmitter and pumping sources, different modulators, and different photodetectors
Author: Tae-Yeon Seong
Publisher: Springer Science & Business Media
ISBN: 9400758634
Category : Science
Languages : en
Pages : 434
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Book Description
Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
