Two-dimensional Numerical Simulation of Semiconductor Devices Using Finite-difference Method PDF Download
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Author: Milind R. Gokhale
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Author: Milind R. Gokhale
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Author: Craig Harlan Price
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 286
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Book Description
Two-dimensional numerical simulation is a necessary tool for modern semiconductor device design. Analytical models and judicious application of one-dimensional simulation cannot accurately represent the highly two-dimensional impurity profiles and structures of VLSI devices. Moreover, the allowable device structures and bias conditions of existing two-dimensional simulation programs are too restrictive to provide the necessary design information. A two-dimensional numerical simulation program, PISCES, has been written in order to study various aspects of device simulation. The program uses vectorized LU decomposition to alternately solve Poison's equation and the electron current continuity equation (Gummels method). The program is extremely flexible and useful in evaluating two-dimensional simulation concerns such as grid allocation, boundary conditions, convergence characteristics and physical models. (Author).
Author: S. Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709187524
Category : Technology & Engineering
Languages : en
Pages : 308
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Book Description
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Author: T. M. McHugh
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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Book Description
A numerical simulation in two spatial dimensions of negative differential mobility semiconducting devices is described. The simulation models time dependent operation of two or three terminal devices in an external circuit. The mathematical model of the semiconductor consists of a set of nonlinear second-order partial differential equations which are solved on a rectangular mesh using explicit finite difference techniques. The external circuit is modeled using lumped linear elements and the resulting equations are solved using implicit techniques. The external circuit equations are coupled to the semiconductor equations by the current flow and potential at the device terminals. The solution of the resulting time dependent boundary value problem is a feature of the simulation which permits more realistic numerical analysis of NDM devices than was previously possible. The simulation is implemented using interactive computer graphics. As the solution evolves, displays of the potential, charge density and current flow in the semiconductor are available via a computer graphic terminal. Sample results of simulations of a negative differential mobility field effect transistor are presented. (Author).
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
ISBN: 3709166195
Category : Computers
Languages : en
Pages : 515
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Book Description
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 48
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Book Description
We develop and demonstrate the capability of a high order accurate finite difference weighted essentially non-oscillatory (WENO) solver for the direct numerical simulation of transients for a two space dimensional Boltzmann transport equation (BTE) coupled with the Poisson equation modeling semiconductor devices such as the MESFET and MOSFET. We compare the simulation results with those obtained by a direct simulation Monte Carlo (DSMC) solver for the same geometry. The main goal for this work is to benchmark and clarify the implementation of boundary conditions for both, deterministic and Monte Carlo numerical schemes modeling these devices, to explain the boundary singularities for both the electric field and mean velocities associated to the solution of the transport equation, and to demonstrate the overall excellent behavior of the deterministic code through the good agreement between the Monte Carlo results and the coarse grid results of the deterministic WENO-BTE scheme.
Author: Graham F. Carey
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 452
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Book Description
This book presents for the first time a unified treatment of the physical processes, mathematical models and numerical techniques for circuit, device and process simulation. At the macroscopic level linear and nonlinear circuit elements are introduced to yield a mathematical model of an integrated circuit. Numerical techniques used to solve this coupled system of ODEs are described. Microscopically, current flow within a transistor is modeled using the drift-diffusion and hydrodynamic PDE systems. Finite difference and finite element methods for spatial discretizations are treated, as are grid generation and refinement, upwinding, and multilevel schemes. At the fabrication level, physical processes such as diffusion, oxidation, and crystal growth are modeled using reaction-diffusion-convection equations. These models require multistep integration techniques and Krylov projection methods for successful implementation. Exercises, programming assignments, and an extensive bibliography are included to reinforce and extend the treatment.
Author: K. Board
Publisher: Pine Ridge Press
ISBN:
Category : Numerical analysis
Languages : en
Pages : 672
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Book Description
Author: P.A. Markowich
Publisher: Springer Science & Business Media
ISBN: 3709136784
Category : Technology & Engineering
Languages : en
Pages : 203
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Book Description
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
