Two Dimensional Numerical Simulation of Negative Differential Mobility Semiconducting Devices PDF Download
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Author: T. M. McHugh
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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Book Description
A numerical simulation in two spatial dimensions of negative differential mobility semiconducting devices is described. The simulation models time dependent operation of two or three terminal devices in an external circuit. The mathematical model of the semiconductor consists of a set of nonlinear second-order partial differential equations which are solved on a rectangular mesh using explicit finite difference techniques. The external circuit is modeled using lumped linear elements and the resulting equations are solved using implicit techniques. The external circuit equations are coupled to the semiconductor equations by the current flow and potential at the device terminals. The solution of the resulting time dependent boundary value problem is a feature of the simulation which permits more realistic numerical analysis of NDM devices than was previously possible. The simulation is implemented using interactive computer graphics. As the solution evolves, displays of the potential, charge density and current flow in the semiconductor are available via a computer graphic terminal. Sample results of simulations of a negative differential mobility field effect transistor are presented. (Author).
Author: T. M. McHugh
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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Book Description
A numerical simulation in two spatial dimensions of negative differential mobility semiconducting devices is described. The simulation models time dependent operation of two or three terminal devices in an external circuit. The mathematical model of the semiconductor consists of a set of nonlinear second-order partial differential equations which are solved on a rectangular mesh using explicit finite difference techniques. The external circuit is modeled using lumped linear elements and the resulting equations are solved using implicit techniques. The external circuit equations are coupled to the semiconductor equations by the current flow and potential at the device terminals. The solution of the resulting time dependent boundary value problem is a feature of the simulation which permits more realistic numerical analysis of NDM devices than was previously possible. The simulation is implemented using interactive computer graphics. As the solution evolves, displays of the potential, charge density and current flow in the semiconductor are available via a computer graphic terminal. Sample results of simulations of a negative differential mobility field effect transistor are presented. (Author).
Author: Milind R. Gokhale
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Author: Craig Harlan Price
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 286
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Book Description
Two-dimensional numerical simulation is a necessary tool for modern semiconductor device design. Analytical models and judicious application of one-dimensional simulation cannot accurately represent the highly two-dimensional impurity profiles and structures of VLSI devices. Moreover, the allowable device structures and bias conditions of existing two-dimensional simulation programs are too restrictive to provide the necessary design information. A two-dimensional numerical simulation program, PISCES, has been written in order to study various aspects of device simulation. The program uses vectorized LU decomposition to alternately solve Poison's equation and the electron current continuity equation (Gummels method). The program is extremely flexible and useful in evaluating two-dimensional simulation concerns such as grid allocation, boundary conditions, convergence characteristics and physical models. (Author).
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 456
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: N. Balkan
Publisher: Springer Science & Business Media
ISBN: 9780306444906
Category : Science
Languages : en
Pages : 458
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Book Description
Proceedings of a workshop held in Il Ciocco, Lucca, Italy, September 1992. Papers cover the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment. Material is organized into the foll
Author: N. Balkan
Publisher: Springer Science & Business Media
ISBN: 1461528224
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.
Author: Jennifer A. Lloyd
Publisher:
ISBN:
Category :
Languages : en
Pages : 120
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Book Description
Author: Kaj J. Grahn
Publisher:
ISBN: 9789516664012
Category :
Languages : en
Pages : 78
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Book Description
Author: K. Board
Publisher: Pine Ridge Press
ISBN:
Category : Numerical analysis
Languages : en
Pages : 618
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Book Description
Author: Gerhard Wachutka
Publisher: Springer Science & Business Media
ISBN: 3709106249
Category : Technology & Engineering
Languages : en
Pages : 387
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Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
