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Author: Esteban Oloarte
Publisher: Broadstone Books
ISBN: 9781937968908
Category : Poetry
Languages : en
Pages : 80
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Book Description
Poetry. Drama. The transistor, a tiny device capable of amplification and control, is the foundation of our digital world. Now comes "Transistor, who is sage, / and who is never seen despite the live feed," to conduct us on a breathtaking journey through that world, in this audacious first full-length collection from Esteban Oloarte. "Transistor broadcasts traffic reports, / powers of suggestion, chances of allegory, / and everyone exits in headsets as exiles." To read this book is to join that parade of exiles, to hitch a ride on an electron, flashing through the circuitry of modern life. Written in the shape of a bible, it is part prophesy, part wisdom literature, part jeremiad, with a bit of Song of Solomon eroticism for good measure, a secular sacred and profane text of social and cultural criticism. A set of "footnotes" run throughout the book like a plainsong chant, offering contrapuntal perspective from philosophers, academics, artists, and critics. More than anything, this is a celebration of the pure incantatory power of words, from a poet mad-drunk on language, a modern-day Delphic oracle. This is new, this is news, this is poetry like you haven't read before, and won't soon forget.
Author: Esteban Oloarte
Publisher: Broadstone Books
ISBN: 9781937968908
Category : Poetry
Languages : en
Pages : 80
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Book Description
Poetry. Drama. The transistor, a tiny device capable of amplification and control, is the foundation of our digital world. Now comes "Transistor, who is sage, / and who is never seen despite the live feed," to conduct us on a breathtaking journey through that world, in this audacious first full-length collection from Esteban Oloarte. "Transistor broadcasts traffic reports, / powers of suggestion, chances of allegory, / and everyone exits in headsets as exiles." To read this book is to join that parade of exiles, to hitch a ride on an electron, flashing through the circuitry of modern life. Written in the shape of a bible, it is part prophesy, part wisdom literature, part jeremiad, with a bit of Song of Solomon eroticism for good measure, a secular sacred and profane text of social and cultural criticism. A set of "footnotes" run throughout the book like a plainsong chant, offering contrapuntal perspective from philosophers, academics, artists, and critics. More than anything, this is a celebration of the pure incantatory power of words, from a poet mad-drunk on language, a modern-day Delphic oracle. This is new, this is news, this is poetry like you haven't read before, and won't soon forget.
Author: S.D. Brotherton
Publisher: Springer Science & Business Media
ISBN: 3319000020
Category : Technology & Engineering
Languages : en
Pages : 467
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Book Description
Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: David L. Pulfrey
Publisher: Cambridge University Press
ISBN: 1139484672
Category : Technology & Engineering
Languages : en
Pages : 355
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Book Description
Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Author: Pouya Valizadeh
Publisher: John Wiley & Sons
ISBN: 1119155495
Category : Technology & Engineering
Languages : en
Pages : 471
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Book Description
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Author: S W Amos
Publisher: Elsevier
ISBN: 008052320X
Category : Technology & Engineering
Languages : en
Pages : 413
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Book Description
Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them at the forefront of transistor circuit design. Although integrated circuits have widespread application, the role of discrete transistors both as important building blocks which students must understand, and as practical solutions to design problems, remains undiminished. The ninth edition has been thoroughly updated to cover the latest technology and applications, including computer circuit simulation, and many diagrams have been revised to bring them in line with current usage. Updated topics include thyristors, Darlington transistors, amplifiers, ring modulators, power supplies, optoelectronics and logic circuits. - The transistor circuits bible - Updated with new developments in technology and applications - Accessible step-by-step introduction ideal for noviceS
Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1119594146
Category : Science
Languages : en
Pages : 389
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Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: Cherie R. Kagan
Publisher: CRC Press
ISBN: 0203911776
Category : Technology & Engineering
Languages : en
Pages : 543
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Book Description
This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays. It evaluates the preparation of polycrystallin
Author: S W Amos
Publisher: Elsevier
ISBN: 1483293904
Category : Technology & Engineering
Languages : en
Pages : 401
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Book Description
For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand and as practical solutions to design problems, especially where appreciable power output or high voltage is required. New circuit techniques covered for the first time in this edition include current-dumping amplifiers, bridge output stages, dielectric resonator oscillators, crowbar protection circuits, thyristor field timebases, low-noise blocks and SHF amplifiers in satellite receivers, video clamps, picture enhancement circuits, motor drive circuits in video recorders and camcorders, and UHF modulators. The plan of the book remains the same: semiconductor physics is introduced, followed by details of the design of transistors, amplifiers, receivers, oscillators and generators. Appendices provide information on transistor manufacture and parameters, and a new appendix on transistor letter symbols has been included.
Author: Michael Reisch
Publisher: Springer Science & Business Media
ISBN: 9783540677024
Category : Medical
Languages : en
Pages : 686
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Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
