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Author: Weihua Han
Publisher: Springer Science & Business Media
ISBN: 3319020218
Category : Science
Languages : en
Pages : 369
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Book Description
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
Author: Weihua Han
Publisher: Springer Science & Business Media
ISBN: 3319020218
Category : Science
Languages : en
Pages : 369
Get Book
Book Description
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
Author: Radek Silhavy
Publisher: Springer
ISBN: 3319572644
Category : Technology & Engineering
Languages : en
Pages : 446
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Book Description
This book presents new methods for and approaches to real-world problems as well as exploratory research describing novel mathematics and cybernetics applications in intelligent systems. It focuses on modern trends in selected fields of technological systems and automation control theory. It also introduces new algorithms, methods and applications of intelligent systems in automation, technological and industrial applications. This book constitutes the refereed proceedings of the Cybernetics and Mathematics Applications in Intelligent Systems Section of the 6th Computer Science On-line Conference 2017 (CSOC 2017), held in April 2017.
Author: Sundarapandian Vaidyanathan
Publisher: Springer
ISBN: 3319517244
Category : Technology & Engineering
Languages : en
Pages : 511
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Book Description
This book reports on the latest advances in and applications of memristors, memristive devices and systems. It gathers 20 contributed chapters by subject experts, including pioneers in the field such as Leon Chua (UC Berkeley, USA) and R.S. Williams (HP Labs, USA), who are specialized in the various topics addressed in this book, and covers broad areas of memristors and memristive devices such as: memristor emulators, oscillators, chaotic and hyperchaotic memristive systems, control of memristive systems, memristor-based min-max circuits, canonic memristors, memristive-based neuromorphic applications, implementation of memristor-based chaotic oscillators, inverse memristors, linear memristor devices, delayed memristive systems, flux-controlled memristive emulators, etc. Throughout the book, special emphasis is given to papers offering practical solutions and design, modeling, and implementation insights to address current research problems in memristors, memristive devices and systems. As such, it offers a valuable reference book on memristors and memristive devices for graduate students and researchers with a basic knowledge of electrical and control systems engineering.
Author: Chinmay Kumar Maiti
Publisher: World Scientific
ISBN: 9814713090
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools. Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text. Contents:IntroductionSimulation ToolsSimulation MethodologyCMOS TechnologyStress-Engineered CMOSHeterojunction Bipolar TransistorsStress-Engineered HBTsFinFETsAdvanced DevicesMemory DevicesPower DevicesSolar CellsHeterojunction Solar CellsSPICE Parameter Extraction Readership: Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics.
Author: Alice Cline Parker
Publisher: Springer Nature
ISBN: 303046377X
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
This book contains stories of women engineers’ paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic’s stories of Jane Goodall’s research that inspired the authors will inspire and guide readers along unconventional pathways to contributions to microelectronics that we can only begin to imagine. The book explores why and how the women writing here chose their career paths and how they navigated their careers. This topic is of interest to a vast audience, from students to professionals to university advisers to industry CEOs, who can imagine the advantages of a future with a diverse work force. Provides insight into women’s early contributions to the field of microelectronics and celebrates the challenges they overcame; Presents compelling innovations from academia, research, and industry into advances, applications, and the future of microelectronics; Includes a fascinating look into topics such as nanotechnologies, video games, analog electronics, design automation, and neuromorphic circuits.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 410
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: David K. Ferry
Publisher: CRC Press
ISBN: 1351796372
Category : Science
Languages : en
Pages : 230
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Book Description
Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics—semiconductors, with their variable densities and effective masses. The author develops Green’s functions starting from equilibrium Green’s functions and going through modern time-dependent approaches to non-equilibrium Green’s functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.
Author: Ting Li
Publisher: Springer
ISBN: 3319508245
Category : Technology & Engineering
Languages : en
Pages : 521
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Book Description
This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 1000404935
Category : Science
Languages : en
Pages : 275
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Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author: Yoshio Nishi
Publisher: CRC Press
ISBN: 1420017667
Category : Technology & Engineering
Languages : en
Pages : 1720
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Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
