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Author: Hajime Asahi
Publisher: John Wiley & Sons
ISBN: 111935501X
Category : Science
Languages : en
Pages : 510
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Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author: Hajime Asahi
Publisher: John Wiley & Sons
ISBN: 111935501X
Category : Science
Languages : en
Pages : 510
Get Book Here
Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Frank Ortmann
Publisher: John Wiley & Sons
ISBN: 3527681582
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic states, the Dirac point, quantum Hall effects and Majorana fermions are illuminated in individual chapters and are described in a clear and logical form. Written by an international team of experts, many of them directly involved in the very first discovery of topological insulators, the book provides the readers with the knowledge they need to understand the electronic behavior of these unique materials. Being more than a reference work, this book is essential for newcomers and advanced researchers working in the field of topological insulators.
Author: Kenji Yasuda
Publisher: Springer Nature
ISBN: 981157183X
Category : Computers
Languages : en
Pages : 109
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Book Description
This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity. Topological insulators are a recently discovered class of materials that possess a spin-momentum-locked surface state. Their exotic spin texture makes them an exciting platform for investigating emergent phenomena, especially when coupled with magnetism or superconductivity. Focusing on the strong correlation between electricity and magnetism in magnetic topological insulators, the author presents original findings on current-direction-dependent nonreciprocal resistance, current-induced magnetization reversal and chiral edge conduction at the domain wall. In addition, he demonstrates how the coupling between superconductivity and topological surface state leads to substantial nonreciprocal resistance. The author also elucidates the origins of these phenomena and deepens readers’ understanding of the topologically nontrivial electronic state. The book includes several works which are published in top journals and were selected for the President’s Award by the University of Tokyo and for the Ikushi Prize, awarded to distinguished Ph.D. students in Japan.
Author: Masataka Mogi
Publisher: Springer Nature
ISBN: 9811921377
Category : Computers
Languages : en
Pages : 120
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Book Description
This book presents experimental studies on emergent transport and magneto-optical properties in three-dimensional topological insulators with two-dimensional Dirac fermions on their surfaces. Designing magnetic heterostructures utilizing a cutting-edge growth technique (molecular beam epitaxy) stabilizes and manifests new quantization phenomena, as confirmed by low-temperature electrical transport and time-domain terahertz magneto-optical measurements. Starting with a review of the theoretical background and recent experimental advances in topological insulators in terms of a novel magneto-electric coupling, the author subsequently explores their magnetic quantum properties and reveals topological phase transitions between quantum anomalous Hall insulator and trivial insulator phases; a new topological phase (the axion insulator); and a half-integer quantum Hall state associated with the quantum parity anomaly. Furthermore, the author shows how these quantum phases can be significantly stabilized via magnetic modulation doping and proximity coupling with a normal ferromagnetic insulator. These findings provide a basis for future technologies such as ultra-low energy consumption electronic devices and fault-tolerant topological quantum computers.
Author: Ahmed A. El Gendy
Publisher: Elsevier
ISBN: 0128139056
Category : Science
Languages : en
Pages : 394
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Book Description
Magnetic Nanostructured Materials: From Lab to Fab presents a complete overview of the translation of nanostructured materials into realistic applications, drawing on the most recent research in the field to discuss the fundamentals, synthesis and characterization of nanomagnetics. A wide spectrum of nanomagnetic applications is included, covering industrial, environmental and biomedical fields, and using chemical, physical and biological methods. Materials such as Fe, Co, CoxC, MnGa, GdSi, ferrite nanoparticles and thin films are highlighted, with their potential applications discussed, such as magnetic refrigeration, energy harvesting, magnetic sensors, hyperthermia, MRI, drug delivery, permanent magnets, and data storage devices. Offering interdisciplinary knowledge on the materials science of nanostructured materials and magnetics, this book will be of interest to researchers in materials science, engineering, physics and chemistry with interest in magnetic nanomaterials, as well as postgraduate students and professionals in industry and government. - Provides interdisciplinary knowledge on the materials science of nanostructured materials and magnetics - Aids in the understanding of complex fundamentals and synthesis methods for magnetic nanomaterials - Includes examples of real applications - Shows how laboratory work on magnetic nanoparticles connects to industrial implementation and applications
Author: Wenqing Liu
Publisher: Woodhead Publishing
ISBN: 0081021550
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
Spintronic 2D Materials: Fundamentals and Applications provides an overview of the fundamental theory of 2D electronic systems that includes a selection of the most intensively investigated 2D materials. The book tells the story of 2D spintronics in a systematic and comprehensive way, providing the growing community of spintronics researchers with a key reference. Part One addresses the fundamental theoretical aspects of 2D materials and spin transport, while Parts Two through Four explore 2D material systems, including graphene, topological insulators, and transition metal dichalcogenides. Each section discusses properties, key issues and recent developments. In addition, the material growth method (from lab to mass production), device fabrication and characterization techniques are included throughout the book. - Discusses the fundamentals and applications of spintronics of 2D materials, such as graphene, topological insulators and transition metal dichalcogenides - Includes an in-depth look at each materials system, from material growth, device fabrication and characterization techniques - Presents the latest solutions on key challenges, such as the spin lifetime of 2D materials, spin-injection efficiency, the potential proximity effects, and much more
Author: Shumin Wang
Publisher: Springer
ISBN: 9811380783
Category : Technology & Engineering
Languages : en
Pages : 403
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Book Description
This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.
Author: Jinsong Zhang
Publisher: Springer
ISBN: 3662499274
Category : Science
Languages : en
Pages : 128
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Book Description
This book presents the transport studies of topological insulator thin films grown by molecular beam epitaxy. Through band structure engineering, the ideal topological insulators, (Bi1−xSbx)2Te3 ternary alloys, are successfully fabricated, which possess truly insulating bulk and tunable conducting surface states. Further transport measurements on these ternary alloys reveal a disentanglement between the magnetoelectric and thermoelectric properties. In magnetically doped topological insulators, the fascinating quantum anomalous Hall effect was experimentally observed for the first time. Moreover, the topology-driven magnetic quantum phase transition was Systematically controlled by varying the strength of the spin-orbital coupling. Readers will not only benefit from the description of the technique of transport measurements, but will also be inspired by the understanding of topological insulators.
Author:
Publisher: DEStech Publications, Inc
ISBN: 160595103X
Category : Technology & Engineering
Languages : en
Pages : 688
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Book Description
All papers including in this proceedings had undergone the strict peer-review by the experts before they are accepted for publications. This proceeding covers the subjects of analog circuits and digital circuits, assembly and packaging, biomedical circuits, computer architecture, computer engineering, control engineering, electric power system and automation, energy and power systems, instrumentation engineering, signal processing and other related areas. We hope this proceeding will contribute in stimulating debate and research among scholars, researchers and academicians. CEEE 2014 is to provide a forum for researchers, academicians, engineers, and government officials from all over the world to involved in the general areas of Electronics and Electrical Engineering to disseminate their latest research results and exchange views on the future research directions of these fields.This conference provides opportunities for the participants to exchange new ideas and application experiences face to face.
