Time Resolved Photoluminescence Spectra of a Mid-Infrared Multiple Quantum Well Semiconductor Laser PDF Download
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Author: Anthony L. Franz
Publisher:
ISBN: 9781423565598
Category : Photoluminescence
Languages : en
Pages : 119
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Book Description
Recombination mechanisms in mid-IR semiconductor lasers are strongly dependent on the carrier density of the active region. The objective of this research is to improve previous carrier density estimates through the incorporation of spectral information. One hundred photoluminescence (PL) spectra were calculated for a variety of carrier densities. Calculations were made for an InAsSb/InAlAsSb multiple quantum well laser sample assuming parabolic bands. The widths of the calculated spectral profiles were tabulated as a function of carrier density. Actual spectra were measured using the Ultrafast Mid-Infrared Photoluminescence System, which uses upconversion to measure the PL intensity in time steps smaller than 1 ps. PL spectra were obtained at 30 times, ranging from 100 ps to 3 ns. Spectral widths were measured and tabulated as a function of time. Combining the plot of calculated spectral width vs. carrier density with the plot of measured spectral width vs. time, we were able to describe the variation of carrier density with time. The carrier density vs. time plot thus generated agreed with earlier measurements by Cooley for low carrier densities. The discrepancy at higher carrier densities could be due to changing experimental conditions or the break down of the parabolic band approximation.
Author: Anthony L. Franz
Publisher:
ISBN: 9781423565598
Category : Photoluminescence
Languages : en
Pages : 119
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Book Description
Recombination mechanisms in mid-IR semiconductor lasers are strongly dependent on the carrier density of the active region. The objective of this research is to improve previous carrier density estimates through the incorporation of spectral information. One hundred photoluminescence (PL) spectra were calculated for a variety of carrier densities. Calculations were made for an InAsSb/InAlAsSb multiple quantum well laser sample assuming parabolic bands. The widths of the calculated spectral profiles were tabulated as a function of carrier density. Actual spectra were measured using the Ultrafast Mid-Infrared Photoluminescence System, which uses upconversion to measure the PL intensity in time steps smaller than 1 ps. PL spectra were obtained at 30 times, ranging from 100 ps to 3 ns. Spectral widths were measured and tabulated as a function of time. Combining the plot of calculated spectral width vs. carrier density with the plot of measured spectral width vs. time, we were able to describe the variation of carrier density with time. The carrier density vs. time plot thus generated agreed with earlier measurements by Cooley for low carrier densities. The discrepancy at higher carrier densities could be due to changing experimental conditions or the break down of the parabolic band approximation.
Author: Edward G. Ferguson
Publisher:
ISBN: 9781423504528
Category : Antimony
Languages : en
Pages : 75
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Book Description
This experiment characterizes antimony-based, multiple quantum-well, types-I and -II, semiconductor samples designed for laser applications. The samples emit light in the 3-5-micron range to exploit an atmospheric transmission window, making them ideal for infrared (IR)-seeking missile countermeasures. Photoluminescence (PL) spectra were collected and yielded bandgap (E(sub g)) dependence-on-temperature relationships. The type-I sample was found to follow the Varshni equation, while the type-II samples showed a rise with temperature in a portion of the curve that should be linear according to the Varshni equation. The type-II samples followed the Varshni equation well at higher temperature. The PL study indicated that the type-I sample had better efficiency than the type-II samples, and that there is some change in efficiency with the waveguide nature of the sample. Carrier temperatures (T(sub c)) were derived from the PL study; all the samples for which Tc was derived operated in the optical phonon regime. The PL data were compared to the FEMB computer model and some correlation between the two in recombination energy was seen. A time- resolved photoluminescence (TRPL) experiment was conducted using the frequency upconversion technique. The experiment clearly found the upconverted signal, but there was a systematic error that prevented any further analysis of the data. (1 table, 27 figures, 30 refs.)
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 988
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Author: Gregory Alan Balchin
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
Author:
Publisher: Academic Press
ISBN: 0128032251
Category : Science
Languages : en
Pages : 3716
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Book Description
This third edition of the Encyclopedia of Spectroscopy and Spectrometry, Three Volume Set provides authoritative and comprehensive coverage of all aspects of spectroscopy and closely related subjects that use the same fundamental principles, including mass spectrometry, imaging techniques and applications. It includes the history, theoretical background, details of instrumentation and technology, and current applications of the key areas of spectroscopy. The new edition will include over 80 new articles across the field. These will complement those from the previous edition, which have been brought up-to-date to reflect the latest trends in the field. Coverage in the third edition includes: Atomic spectroscopy Electronic spectroscopy Fundamentals in spectroscopy High-Energy spectroscopy Magnetic resonance Mass spectrometry Spatially-resolved spectroscopic analysis Vibrational, rotational and Raman spectroscopies The new edition is aimed at professional scientists seeking to familiarize themselves with particular topics quickly and easily. This major reference work continues to be clear and accessible and focus on the fundamental principles, techniques and applications of spectroscopy and spectrometry. Incorporates more than 150 color figures, 5,000 references, and 300 articles for a thorough examination of the field Highlights new research and promotes innovation in applied areas ranging from food science and forensics to biomedicine and health Presents a one-stop resource for quick access to answers and an in-depth examination of topics in the spectroscopy and spectrometry arenas
Author: Markus-Christian Amann
Publisher: Artech House Optoelectronics L
ISBN: 9780890069639
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This comprehensive reference discusses the underlying physics, operational principles, and performance and applications of tunable laser diodes. The book is supplemented with practical examples and helpful notations.
Author: Anthony Krier
Publisher: Springer
ISBN: 1846282098
Category : Science
Languages : en
Pages : 756
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Book Description
Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author:
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 258
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Book Description
