Thin Film CuIn1[subscript X]Ga[subscript X]Se-based Solar Cells Prepared from Solution-based Precursors PDF Download
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Author: Raghu N. Bhattacharya
Publisher:
ISBN:
Category : Copper indium selenide
Languages : en
Pages : 4
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Book Description
![Thin Film CuIn1[subscript X]Ga[subscript X]Se-based Solar Cells Prepared from Solution-based Precursors PDF](https://books.google.com/books/content/images/frontcover/AacAtwAACAAJ?fife=w80-h100)
Author: Raghu N. Bhattacharya
Publisher:
ISBN:
Category : Copper indium selenide
Languages : en
Pages : 4
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).
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Category :
Languages : en
Pages : 5
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Book Description
The authors have fabricated high-efficiency thin-film CuIn{sub 1-x}GaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1-x}GaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Book Description
The authors have fabricated high-efficiency thin-film CuIn{sub 1-x}Ga(subscript x)Se2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1-x}Ga(subscript x)Se2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
