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Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923829
Category : Technology & Engineering
Languages : en
Pages : 729
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Book Description
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923829
Category : Technology & Engineering
Languages : en
Pages : 729
Get Book Here
Book Description
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Author: Harold L. Grubin
Publisher:
ISBN:
Category :
Languages : en
Pages : 741
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Book Description
Contents: Modelling of Sub-Micron Devices; Boltzmann Transport Equation; Transport and Material Considerations for Submicron Devices; Epitaxial Growth for Sub Micron Structures; Insulator/Semiconductor Interfaces; Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces; Deep Levels at Compound-Semiconductor Interfaces; Ensemble Monte Carlo Techniques; Noise and Diffusion in Submicron Structures; Superlattices; Submicron Lithography; Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension; Physics of Heterostructures and Heterostructure Devices; Correlation Effects in Short Time, Nonstationary Transport; Device-Device Interactions; Quantum Transport and the Wigner Function; Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices; The Influence of Contacts on the Behavior of Near and Sub-Micron InP Devices; Monte Carlo Simulation of Transport in Submicron Structures; Two Dimensional Electron Gas Fet; Hot Electron Transfer AMplifiers; New Graded Band Gap and Superlattice Structures and Their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices; Metal-Semiconductor Interfaces; Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser-Excited Electron-Hole Plasmas; and Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques. (JHD).
Author: M. J. Kelly
Publisher: Clarendon Press
ISBN: 0191590096
Category : Science
Languages : en
Pages : 569
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Book Description
This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
Author: Jagdeep Shah
Publisher: Elsevier
ISBN: 0080925707
Category : Science
Languages : en
Pages : 525
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Book Description
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. Topics covered include Reduced dimensionality and quantum wells Carrier-phonon interactions and hot phonons Femtosecond optical studies of hot carrier Ballistic transport Submicron and resonant tunneling devices
Author: Walter E. Bron
Publisher: Springer Science & Business Media
ISBN: 1461529549
Category : Technology & Engineering
Languages : en
Pages : 398
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Book Description
The Advanced Study Institute (AS!) considered a number offacets of the very rapidly advancing field of theoretical and experimental aspects of ultrashort processes in condensed matter. Common threads exist between a series of example cases. One major subgroup of topics involves the ultrashort dynamics of excitations of various "particles" produced through the interactions of condensed matter with ultrashort duration laser light. Examples ofthe excitations include electronic and hole carriers, electron-hole plasma, phonons, vibrons and rotons, two phonon states, and excitons. Experimentation on the dynamics of such excitations, are carried out in the bulk, at surfaces, in thin films, and in quantum wells. The dynamical steps which the excitations usually undergo include photo-excitation, local thermalization, particle-particle interaction, particle phonon interactions and eventual return to true thermal equilibrium. This ASI was organized to benefit particularly advanced graduate students, specifically, those near the end of their Ph.D. thesis projects, and also for postdoctoral scholars already active in the field. The overall organizational goal was centered around a set oftutorially based lectures intermingled with full scale discussion periods of equal time and importance as the lectures. The general discussion periods were designed to offer to the participants ample time to ask detailed questions and to make comments and contributions of their own. In order to complete the involvement of the participants a full length poster session was also held. A representative set of abstracts of these posters appear as an Appendix to the lectures.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 588
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Book Description
Author: G. Hooft
Publisher: Springer Science & Business Media
ISBN: 1461307295
Category : Science
Languages : en
Pages : 603
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Book Description
During the past 15 years, quantum field theory and classical statistical mechanics have merged into a single field, and the need for nonperturbative methods for the description of critical phenomena in statistical mechanics as well as for problems in elementary particle physics are generally acknowledged. Such methods formed the central theme of the 1987 Cargese Advanced Study Institut. e on "Nonpert. urbat. ive Quantum Field Theory." The use of conformal symmet. ry has been of central interest in recent years, and was a main subject at. t. he ASI. Conformal invariant quantum field theory describes statistical mechanical systems exactly at a critical point, and can be analysed to a remarkable ext. ent. by group t. heoretical methods. Very strong results have been obtained for 2-dimensional systems. Conformal field theory is also the basis of string theory, which offers some hope of providing a unified t. heory of all interactions between elementary particles. Accordingly, a number of lectures and seminars were presented on these two topics. After syst. ematic introductory lectures, conformal field theory on Riemann surfaces, orbifolds, sigma models, and application of loop group theory and Grassmannians were discussed, and some ideas on modular geometry were presented. Other lectures combined' traditional techniques of constructive quant. um field theory with new methods such as the use of index-t. heorems and infinite dimensional (Kac Moody) symmetry groups. The problems encountered in a quantum mechanical description of black holes were discussed in detail.
Author: J. Gomes Ferreira
Publisher: Springer Science & Business Media
ISBN: 1461307317
Category : Science
Languages : en
Pages : 425
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Book Description
The fields of X-Ray Spectroscopy in Atomic and Solid State Physics have undergone spectacular growth, sometimes rather anarchic, during the past decade. The old mold of X-ray spectroscopy has been burst, and this ASI provided an in-depth exploration of theory and recently developed techniques; however, some work still needs to be done to create a new frame and reduce anarchy in the field. The purpose of this Institute was to gather atomic and solid state physicists working in theoretical and new experimental techniques recently developed. The lectures were concerned with, among others, the following fields: theory of X-ray near-edge structure, XPS and AES with conventional and synchrotron radiation sources, PIXE, EXAFS, SEXAFS, XRF, SXS, and molecular spectroscopy. The Institute considered in detail some of these experimental tech niques and the pertinent theoretical interpretations by selecting an important list of lectures which summarize the scientific contents of the ASI. The truly international character of this NATO ASI, its size, and the high quality of the lecturers contributed to make this school a very fruitful scientific meeting. Two to four general lectures were given each working day and three afternoons were reserved for presentation of current work in the form of posters. We think that these poster presentations reflect the current research work of the participants.
Author: Claude Weisbuch
Publisher: Springer Science & Business Media
ISBN: 1475700911
Category : Science
Languages : en
Pages : 414
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Book Description
Low-dimensional materials are of fundamental interest in physics and chemistry and have also found a wide variety of technological applica tions in fields ranging from microelectronics to optics. Since 1986, several seminars and summer schools devoted to low-dimensional systems have been supported by NATO. The present one, Physics, Fabrication and Applications of Multilayered structures, brought together specialists from different fields in order to review fabrication techniques, charac terization methods, physics and applications. Artificially layered materials are attractive because alternately layering two (or more) elements, by evaporation or sputtering, is a way to obtain new materials with (hopefully) new physical properties that pure materials or alloys do not allow. These new possibilities can be ob tained in electronic transport, optics, magnetism or the reflectivity of x-rays and slow neutrons. By changing the components and the thickness of the layers one can track continuously how the new properties appear and follow the importance of the multilayer structure of the materials. In addition, with their large number of interfaces the study of inter face properties becomes easier in multilayered structures than in mono layers or bilayers. As a rule, the role of the interface quality, and also the coupling between layers, increases as the thickness of the layer decreases. Several applications at the development stage require layer thicknesses of just a few atomic layers.
Author: C.Y. Fong
Publisher: Springer Science & Business Media
ISBN: 1468455532
Category : Science
Languages : en
Pages : 350
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Book Description
A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
