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Author: Manijeh Razeghi
Publisher: CRC Press
ISBN: 9780750303095
Category : Science
Languages : en
Pages : 466
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Book Description
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications. Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits. The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials. Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.
Author: Manijeh Razeghi
Publisher: CRC Press
ISBN: 9780750303095
Category : Science
Languages : en
Pages : 466
Get Book Here
Book Description
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications. Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits. The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials. Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.
Author: Manijeh Razeghi
Publisher: Springer Science & Business Media
ISBN: 0387287515
Category : Technology & Engineering
Languages : en
Pages : 894
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Book Description
Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication Covers wide range of topics in the same style and in the same notation Most up to date developments in semiconductor physics and nano-engineering Mathematical derivations are carried through in detail with emphasis on clarity Timely application areas such as biophotonics , bioelectronics
Author: Paul H. Holloway
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937
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Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Author: Eugenio Iannone
Publisher: CRC Press
ISBN: 1351832069
Category : Medical
Languages : en
Pages : 1351
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Book Description
Labs on Chip: Principles, Design and Technology provides a complete reference for the complex field of labs on chip in biotechnology. Merging three main areas— fluid dynamics, monolithic micro- and nanotechnology, and out-of-equilibrium biochemistry—this text integrates coverage of technology issues with strong theoretical explanations of design techniques. Analyzing each subject from basic principles to relevant applications, this book: Describes the biochemical elements required to work on labs on chip Discusses fabrication, microfluidic, and electronic and optical detection techniques Addresses planar technologies, polymer microfabrication, and process scalability to huge volumes Presents a global view of current lab-on-chip research and development Devotes an entire chapter to labs on chip for genetics Summarizing in one source the different technical competencies required, Labs on Chip: Principles, Design and Technology offers valuable guidance for the lab-on-chip design decision-making process, while exploring essential elements of labs on chip useful both to the professional who wants to approach a new field and to the specialist who wants to gain a broader perspective.
Author: H. Aoki
Publisher: Springer Science & Business Media
ISBN: 9401131902
Category : Science
Languages : en
Pages : 471
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Book Description
In Bird of Passage by Rudolf Peierls, we find a paragraph in which he de scribes his Cambridge days in the 1930s: On these [relativistic field theory] problems my main contacts were Dirac, and the younger theoreticians. These included in particular Nevill (now Sir Nevill) Mott, perhaps the friendliest among many kind and friendly people we met then. Professor Kamimura became associated with Sir Rudolf Peierls in the 1950s, when he translated, with his colleagues, Peierls's 1955 textbook, Quantum Theory of Solids, into Japanese. This edition, to which Sir Rudolf himself contributed a preface, benefitted early generations of Japanese solid state physicists. Later in 1974/5, during a sabbatical year spent at the Cavendish Laboratory, Professor Kamimura met and began a long association with Sir Nevill Mott. In particular, they developed ideas for disordered systems. One of the outcomes is a paper coauthored by them on ESR-induced variable range hopping in doped semiconductors. A series of works on disordered systems, together with those on two-dimensional systems, have served as building blocks for Physics of Interacting Electrons in Disordered Systems, in the International Series of Monographs on Physics, coauthored by Aoki and published in 1989 by the Oxford University Press. Soon after Professor Kamimura obtained a D. Sc. in 1959 for the work on the ligand field theory under the supervision ofMasao Kotani, his strong con nections in the international physical community began when he worked at the Bell Telephone Laboratories in 1961/64.
Author: H. Schlötterer
Publisher: Elsevier
ISBN: 0444596755
Category : Science
Languages : en
Pages : 542
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Book Description
The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Author: J.M. Chamberlain
Publisher: Springer Science & Business Media
ISBN: 146847412X
Category : Science
Languages : en
Pages : 477
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Book Description
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Author: Leo Esaki
Publisher: Springer Science & Business Media
ISBN: 1489936866
Category : Technology & Engineering
Languages : en
Pages : 711
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Book Description
This volume contains the proceedings of the first NATO Science Forum "Highlights of the Eighties and Future Prospects in Condensed Matter Physics" (sponsored by the NATO Scientific Affairs Division), which took place in September, 1990, in the pleasant surroundings provided by the Hotel du Palais at Biarritz, France. One hundred distinguished physicists from seventeen countries, including six Nobellaureates, were invited to participate in the four and a half day meeting. Focusing on three evolving frontiers: semiconductor quantum structures, including the subject of the quantumHall effect (QHE), high temperature superconductivity (HiTc) and scanning tunneling microscopy (STM), the Forum provided an opportunity to evaluate, in depth, each of the frontiers, by reviewing the progress made during the last few years and, more importantly, exploring their implications for the future. Though serious scientists are not "prophets," all of the participants showed a strong interest in this unique format and addressed the questions of future prospects, either by extrapolating from what has been known, or by a stretch of their "educated" imagination.
Author: A. Stella
Publisher: Elsevier
ISBN: 1483290360
Category : Science
Languages : en
Pages : 496
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Book Description
This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.
Author: Shulu Chen
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Since the invention of the integrated circuit (IC) in the late 1950s, the semiconductor industry has experienced dramatic growth driven by both technology and manufacturing improvements. Over the past 40 years, the industry's growth trend has been predicted by Moore's law, and driven by the constant electrical field scaling design methodology. While the intrinsic performance of each device improves over generations, the corresponding interconnects do not. To alleviate this interconnect issue, a three-dimensional (3D) integration concept of transforming longer side to side interconnects into shorter vertical vias by using multiple active layers has attracted much attention. The focus of this thesis is on providing the foundation for 3D heterogeneous integration by investigating methods of growing single crystal materials on the silicon platform and the subsequent low-temperature process flow, through experimental demonstration, theoretical modeling and device structure simplification. First, thin film single crystal GaAs and GaSb were grown on dielectric layers on bulk silicon substrates by the rapid melt growth (RMG) method, using both rapid thermal annealing (RTA) and laser annealing. The relationship between stoichiometry and the crystal structure is discussed according to the theoretical phase diagram and the experimental results. A modified RMG structure is also proposed and demonstrated to solve the potential issue involved in integrating the RMG method into a three-dimensional integrated circuits (3D-IC) process with thick isolation layers. In order to estimate the outcome of the crystallization and to provide further understanding of the physics behind this RMG process, compact models are derived based on classical crystallization theory. Mathematical models including the geometry, the thermal environment and the outcome of the crystallization are built. The initial cooling rate is identified as the key factor for the RMG process. With the ability of integrating multiple materials on silicon substrates, the subsequent process flows using low-temperature-fabrication or simplified device structures are proposed and evaluated to achieve high density 3D integration. A "bonding substrate/monolithic contact" approach is proposed to relieve the thermal constraint from getting the starting single crystal layer without sacrificing the interconnect performance. A low-temperature process using germanium as the channel material is also discussed. Finally, gated thin film resistor structures are designed and compared to the conventional MOSFET structure with a focus on their relative performance and process complexity trade-off for future 3D-IC implementation.
