Author: Nigel Guy Skinner
Publisher:
ISBN:
Category : Metal insulator semiconductors
Languages : en
Pages : 284
Book Description
The Growth of Silicon Nitride Films by Microwave Excited Remote Plasma Chemical Vapour Deposition
Author: Nigel Guy Skinner
Publisher:
ISBN:
Category : Metal insulator semiconductors
Languages : en
Pages : 284
Book Description
Publisher:
ISBN:
Category : Metal insulator semiconductors
Languages : en
Pages : 284
Book Description
The Growth of Silicon Nitride Crystalline Films Using Microwave Plasma Enhanced Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 31
Book Description
Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 deg C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the alpha and beta phases. Scanning electron microscope imaging indicates beta-Si3N4 possesses six-fold symmetry with particles size in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In an another experiment, an organo- silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 micrometer/hr as determined by profilometry. A growth mechanism for both cases is proposed.
Publisher:
ISBN:
Category :
Languages : en
Pages : 31
Book Description
Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 deg C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the alpha and beta phases. Scanning electron microscope imaging indicates beta-Si3N4 possesses six-fold symmetry with particles size in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In an another experiment, an organo- silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 micrometer/hr as determined by profilometry. A growth mechanism for both cases is proposed.
Microwave Plasma-enhanced Chemical Vapor Deposition and Characterization of Diamond and Silicon Nitride Thin Films
Author: Kevin John Grannen
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Silicon Nitride and Silicon Dioxide Thin Insulating Films VII
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773478
Category : Science
Languages : en
Pages : 652
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773478
Category : Science
Languages : en
Pages : 652
Book Description
Thermal and Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films
Author: Sui-Yuan Lynn
Publisher:
ISBN:
Category : Silicon nitride
Languages : en
Pages : 212
Book Description
Publisher:
ISBN:
Category : Silicon nitride
Languages : en
Pages : 212
Book Description
Silicon Nitride and Silicon Dioxide Thin Insulating Films
Author:
Publisher:
ISBN:
Category : Silicon dioxide
Languages : en
Pages : 306
Book Description
Publisher:
ISBN:
Category : Silicon dioxide
Languages : en
Pages : 306
Book Description
Synthesis and Characterization of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane
Author: Yanyao Yu
Publisher:
ISBN:
Category : Diethysilane
Languages : en
Pages : 116
Book Description
Publisher:
ISBN:
Category : Diethysilane
Languages : en
Pages : 116
Book Description
Influence of Nitrogen on the Growth of Diamond Thin Films by Microwave Plasma Assisted Chemical Vapour Deposition
Author: Thierry Vandevelde
Publisher:
ISBN:
Category :
Languages : en
Pages : 115
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 115
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 892
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 892
Book Description
Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride from 1,1,3,3,5,5,-hexamethylcyclotrisilazane
Author: Todd Alan Brooks
Publisher:
ISBN:
Category :
Languages : en
Pages : 286
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 286
Book Description