Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The Electronic and Metallurgical Properties of Amorphous Silicon Thin Films Deposited by Rf Sputtering
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Amorphous and Heterogeneous Silicon Thin Films
Author:
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 840
Book Description
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 840
Book Description
Plasma Deposition of Amorphous Silicon-Based Materials
Author: Pio Capezzuto
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Amorphous and Heterogeneous Silicon Thin Films - 2000: Volume 609
Author: Robert W. Collins
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1118
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1118
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Hydrogenated Amorphous Silicon Films Deposited by Triode-assisted Reactive Sputtering
Author: Kenneth J. Kantor
Publisher:
ISBN:
Category :
Languages : en
Pages : 174
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 174
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 660
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 660
Book Description
An Investigation of Electrical and Optical Properties of Sputtered Amorphous Silicon Nitride and Germanium Thin Films
Author: Rajendra S. Khandelwal
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 246
Book Description
Low temperature preparation of thin amorphous Silicon Nitride and Germanium Films by direct RF sputter deposition was investigated. Influence of various sputtering parameters on film properties was studied. Infrared transmission spectrophotometry was used to evaluate optical properties of the films whereas electrical characteristics of the films were determined from current-voltage measurements of MIS structures. For Silicon Nitride films it was observed that the stoichiometry, as indicated by the IR transmission, dielectric constant and current density versus square root of electric field measurements, was a strong function of the sputtering gas composition and particularly the Ar/N ratio in the sputtering gas. It was established from the current-voltage relationship that the dominant conduction mechanism in these films is of PooleFrenkel type. The current-voltage characteristics of the MIS devices were observed to be independent of the electrode material, device area and the film thickness. It is concluded that the insulating films thus deposited were comparable to those deposited using any other deposition method and is anticipated that due to the low deposition temperatures, sputtering may emerge as a highly potential process for optoelectronic device passivation.
Publisher:
ISBN:
Category : Sputtering (Physics)
Languages : en
Pages : 246
Book Description
Low temperature preparation of thin amorphous Silicon Nitride and Germanium Films by direct RF sputter deposition was investigated. Influence of various sputtering parameters on film properties was studied. Infrared transmission spectrophotometry was used to evaluate optical properties of the films whereas electrical characteristics of the films were determined from current-voltage measurements of MIS structures. For Silicon Nitride films it was observed that the stoichiometry, as indicated by the IR transmission, dielectric constant and current density versus square root of electric field measurements, was a strong function of the sputtering gas composition and particularly the Ar/N ratio in the sputtering gas. It was established from the current-voltage relationship that the dominant conduction mechanism in these films is of PooleFrenkel type. The current-voltage characteristics of the MIS devices were observed to be independent of the electrode material, device area and the film thickness. It is concluded that the insulating films thus deposited were comparable to those deposited using any other deposition method and is anticipated that due to the low deposition temperatures, sputtering may emerge as a highly potential process for optoelectronic device passivation.
Polycrystalline And Amorphous Thin Films And Devices
Author: Lawrence Kazmerski
Publisher: Elsevier
ISBN: 0323156045
Category : Technology & Engineering
Languages : en
Pages : 321
Book Description
Polycrystalline and Amorphous Thin Films and Devices is a compilation of papers that discusses the electronic, optical, and physical properties of thin material layers and films. This compilation reviews the different applications of thin films of various materials used as protective and optical coatings, thermal transfer layers, and selective membranes from submicron- area VLSI memory units to large-area energy conservation devices. Some papers discuss the basic properties, such as growth, structure, electrical, and optical mechanisms that are encountered in amorphous and polycrystalline thin semiconductor films. For example, experiments on electronic structure of dislocations have led to a model for the intrinsic properties of grain boundaries in polycrystalline semiconductor thin films that can have an impact on the designs of high-efficiency, thin-film solar cells. Other papers review the problems encountered in these thin layers in active semiconductor devices and passive technologies. Techniques in film growth and control variables of source, substrate temperature, and substrate properties will determine the successful performance of the devices installed with these thin film layers. This compilation can prove valuable for chemists, materials engineers, industrial technologists, and researchers in thin-film technology.
Publisher: Elsevier
ISBN: 0323156045
Category : Technology & Engineering
Languages : en
Pages : 321
Book Description
Polycrystalline and Amorphous Thin Films and Devices is a compilation of papers that discusses the electronic, optical, and physical properties of thin material layers and films. This compilation reviews the different applications of thin films of various materials used as protective and optical coatings, thermal transfer layers, and selective membranes from submicron- area VLSI memory units to large-area energy conservation devices. Some papers discuss the basic properties, such as growth, structure, electrical, and optical mechanisms that are encountered in amorphous and polycrystalline thin semiconductor films. For example, experiments on electronic structure of dislocations have led to a model for the intrinsic properties of grain boundaries in polycrystalline semiconductor thin films that can have an impact on the designs of high-efficiency, thin-film solar cells. Other papers review the problems encountered in these thin layers in active semiconductor devices and passive technologies. Techniques in film growth and control variables of source, substrate temperature, and substrate properties will determine the successful performance of the devices installed with these thin film layers. This compilation can prove valuable for chemists, materials engineers, industrial technologists, and researchers in thin-film technology.
Metal Based Thin Films for Electronics
Author: Klaus Wetzig
Publisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 390
Book Description
This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.
Publisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 390
Book Description
This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.
Electronic State Distribution and Some Transport Properties of Amorphous Silicon Thin Films
Author: Abdessalam Yacoub Ghaith
Publisher:
ISBN:
Category : Physical sciences
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Physical sciences
Languages : en
Pages :
Book Description