The electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download The electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications PDF full book. Access full book title The electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications by John Con Carrano. Download full books in PDF and EPUB format.
Author: John Con Carrano
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 286
Get Book Here
Book Description
Author: John Con Carrano
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 286
Get Book Here
Book Description
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
Get Book Here
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Reza Moazzami
Publisher:
ISBN:
Category :
Languages : en
Pages : 222
Get Book Here
Book Description
Author: Emmanuel Defaÿ
Publisher: John Wiley & Sons
ISBN: 1118602803
Category : Technology & Engineering
Languages : en
Pages : 347
Get Book Here
Book Description
This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.
Author: G. S. Mathad
Publisher: The Electrochemical Society
ISBN: 9781566771832
Category : Technology & Engineering
Languages : en
Pages : 388
Get Book Here
Book Description
Author: Chandrasekhara Sudhama
Publisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 136
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 800
Get Book Here
Book Description
Author: Hari Singh Nalwa
Publisher: Elsevier
ISBN: 0080533248
Category : Technology & Engineering
Languages : en
Pages : 3436
Get Book Here
Book Description
This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures.Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices.Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Author: Hyeon-Seag Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 534
Get Book Here
Book Description
Author: Robert D. Pugh
Publisher:
ISBN:
Category :
Languages : en
Pages : 173
Get Book Here
Book Description
A novel technique for determining the electrical properties of lead zirconate titanate (PZT) ferroelectric-film memory devices is reported which eliminates a major systematic error discovered in other techniques. This novel technique measures the electrical response of a ferroelectric material (device) to an electrical signal that is similar in amplitude and frequency to the signals used in digital computers. The technique also provides a method for consistently converting the measured electrical response into polarization values. The ability to consistently process the data allows researches to accurately compare the results of different measurements and to investigate the relationship changes in the operating characteristics of a ferro electric memory device and changes in the electrical properties of the ferroelectric material. Ferroelectric ageing in a PZT film was investigated using this new technique. The results of this investigation indicated that ferroelectric ageing in PZT films is similar to ferroelectric ageing in many bulk ferroelectric materials. Specifically, 'effective' internal electric fields increase linearly with the lozarithm of the ageing time. Additionally, the investigation revealed how earlier measurement techniques motivated investigators to believe that ferroelectric-film ageing was different from bulk ferroelectric ageing ... Ferroelectric devices, Nonvolatile Memory, Ferroelectric ageing, Thin-film Ferroelectric materials.
