The Effect of Surface Orientation on Silicon Oxidation Kinetics PDF Download
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Author: E. A. Lewis
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
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Book Description
It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.
Author: E. A. Lewis
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
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Book Description
It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.
Author: Eleanor Ann Lewis
Publisher:
ISBN:
Category : Oxidation
Languages : en
Pages : 404
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Book Description
Author: John Martin DeLarios
Publisher:
ISBN:
Category :
Languages : en
Pages : 562
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Book Description
Author: Xiaoge Gregory Zhang
Publisher: Springer Science & Business Media
ISBN: 0306479214
Category : Science
Languages : en
Pages : 525
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Book Description
It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Author: Badih El-Kareh
Publisher: Springer Science & Business Media
ISBN: 1461522099
Category : Technology & Engineering
Languages : en
Pages : 605
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Book Description
The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Author: Andrew Sarangan
Publisher: CRC Press
ISBN: 1315353423
Category : Technology & Engineering
Languages : en
Pages : 299
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Book Description
This book is designed to introduce typical cleanroom processes, techniques, and their fundamental principles. It is written for the practicing scientist or engineer, with a focus on being able to transition the information from the book to the laboratory. Basic theory such as electromagnetics and electrochemistry is described in as much depth as necessary to understand and explain the current practice and their limitations. Examples from various areas of interest will be covered, such as the fabrication of photonic devices including photo detectors, waveguides, and optical coatings, which are not commonly found in other fabrication texts.
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489907742
Category : Science
Languages : en
Pages : 543
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Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: Eugene A. Irene
Publisher:
ISBN:
Category :
Languages : en
Pages : 19
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Book Description
The initial stage of the thermal oxidation of various crystallographic orientations of silicon reveals a complex rate behavior. This behavior is not understood within the conventional linear - parabolic model. A recently revised model which explicitly contains the areal density of Si atoms and mechanical stress effects is shown to provide both a qualitative and somewhat quantitative explanation of the complex substrate orientation effects. The purpose of this study is to analyze the crossover effect in terms of a recently proposed viscous flow model for Si oxidation. This model utilizes the notion of mechanical stress and viscous relaxation in Si02 which occur as a result of the oxidation process on a Si substrate in addition to the other assumptions in the L-P model such as a steady state between the interface reaction and the transport of oxidant through the oxide. It is reported herein that the new viscous flow model provides a reasonable qualitative explanation for the crossover effect and in some instances a quantitative correlation of the effect.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 746
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Book Description
Author: J. K. Srivastava
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
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Book Description
Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.
