The Assessment and Development of Scanning Electron Microscopy in the Semiconductor Materials and Device Physics Field PDF Download
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Author: David Vernon Sulway
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: David Vernon Sulway
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Nicolas Brodusch
Publisher: Springer
ISBN: 9811044333
Category : Technology & Engineering
Languages : en
Pages : 143
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Book Description
This book highlights what is now achievable in terms of materials characterization with the new generation of cold-field emission scanning electron microscopes applied to real materials at high spatial resolution. It discusses advanced scanning electron microscopes/scanning- transmission electron microscopes (SEM/STEM), simulation and post-processing techniques at high spatial resolution in the fields of nanomaterials, metallurgy, geology, and more. These microscopes now offer improved performance at very low landing voltage and high -beam probe current stability, combined with a routine transmission mode capability that can compete with the (scanning-) transmission electron microscopes (STEM/-TEM) historically run at higher beam accelerating voltage
Author: David Cherns
Publisher: Springer Science & Business Media
ISBN: 1461305276
Category : Medical
Languages : en
Pages : 413
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Book Description
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
Author: David G. Rickerby
Publisher: Springer Science & Business Media
ISBN: 9401144516
Category : Technology & Engineering
Languages : en
Pages : 503
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Book Description
The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.
Author: Cullis
Publisher: CRC Press
ISBN: 9780854981786
Category : Technology & Engineering
Languages : en
Pages : 836
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Book Description
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 1402086156
Category : Technology & Engineering
Languages : en
Pages : 504
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Book Description
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author:
Publisher: Academic Press
ISBN: 0080961584
Category : Technology & Engineering
Languages : en
Pages : 439
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Book Description
Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. This particular volume presents several timely articles on the scanning transmission electron microscope. Updated with contributions from leading international scholars and industry experts Discusses hot topic areas and presents current and future research trends Provides an invaluable reference and guide for physicists, engineers and mathematicians
Author: Patrick Echlin
Publisher: Springer Science & Business Media
ISBN: 1475790279
Category : Medical
Languages : en
Pages : 463
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Book Description
This book has its origins in the intensive short courses on scanning elec tron microscopy and x-ray microanalysis which have been taught annually at Lehigh University since 1972. In order to provide a textbook containing the materials presented in the original course, the lecturers collaborated to write the book Practical Scanning Electron Microscopy (PSEM), which was published by Plenum Press in 1975. The course con tinued to evolve and expand in the ensuing years, until the volume of material to be covered necessitated the development of separate intro ductory and advanced courses. In 1981 the lecturers undertook the project of rewriting the original textbook, producing the volume Scan ning Electron Microscopy and X-Ray Microanalysis (SEMXM). This vol ume contained substantial expansions of the treatment of such basic material as electron optics, image formation, energy-dispersive x-ray spectrometry, and qualitative and quantitative analysis. At the same time, a number of chapters, which had been included in the PSEM vol ume, including those on magnetic contrast and electron channeling con trast, had to be dropped for reasons of space. Moreover, these topics had naturally evolved into the basis of the advanced course. In addition, the evolution of the SEM and microanalysis fields had resulted in the devel opment of new topics, such as digital image processing, which by their nature became topics in the advanced course.
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1000112209
Category : Science
Languages : en
Pages : 819
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Book Description
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Author: Stephen J. Pennycook
Publisher: Springer
ISBN: 9781441971999
Category : Technology & Engineering
Languages : en
Pages : 762
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Book Description
Scanning transmission electron microscopy has become a mainstream technique for imaging and analysis at atomic resolution and sensitivity, and the authors of this book are widely credited with bringing the field to its present popularity. Scanning Transmission Electron Microscopy(STEM): Imaging and Analysis will provide a comprehensive explanation of the theory and practice of STEM from introductory to advanced levels, covering the instrument, image formation and scattering theory, and definition and measurement of resolution for both imaging and analysis. The authors will present examples of the use of combined imaging and spectroscopy for solving materials problems in a variety of fields, including condensed matter physics, materials science, catalysis, biology, and nanoscience. Therefore this will be a comprehensive reference for those working in applied fields wishing to use the technique, for graduate students learning microscopy for the first time, and for specialists in other fields of microscopy.
