Synthesis of Carbon and Tungsten Based Thin Films by Plasma Enhanced Chemical Vapor Deposition

Synthesis of Carbon and Tungsten Based Thin Films by Plasma Enhanced Chemical Vapor Deposition PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Synthesis of Carbon and Tungsten Based Thin Films by Plasma Enhanced Chemical Vapor Deposition

Synthesis of Carbon and Tungsten Based Thin Films by Plasma Enhanced Chemical Vapor Deposition PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Synthesis of Thin Films in Boron-carbon-nitrogen Ternary System by Microwave Plasma Enhanced Chemical Vapor Deposition

Synthesis of Thin Films in Boron-carbon-nitrogen Ternary System by Microwave Plasma Enhanced Chemical Vapor Deposition PDF Author: Ratandeep Kukreja
Publisher:
ISBN:
Category :
Languages : en
Pages : 186

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Plasma-enhanced Chemical Vapor Deposition and Characterization of Tungsten Films

Plasma-enhanced Chemical Vapor Deposition and Characterization of Tungsten Films PDF Author: John Ka-ngai Chu
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 270

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I. Plasma Enhanced Chemical Vapor Deposition of Main Group Nitride Thin Films

I. Plasma Enhanced Chemical Vapor Deposition of Main Group Nitride Thin Films PDF Author: Sri Prikash Rangarajan
Publisher:
ISBN:
Category : Amides
Languages : en
Pages : 330

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Plasma-Enhanced Chemical Vapor Deposition of Tungsten Films

Plasma-Enhanced Chemical Vapor Deposition of Tungsten Films PDF Author: J. K. Chu
Publisher:
ISBN:
Category :
Languages : en
Pages : 4

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Plasma Enhanced Chemical Vapor Deposition of Stress Free Tungsten Films

Plasma Enhanced Chemical Vapor Deposition of Stress Free Tungsten Films PDF Author: David Perese
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 158

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The Characterization of Thin Carbon Films Created Via Radio Frequency Plasma-enhanced Chemical Vapor Deposition

The Characterization of Thin Carbon Films Created Via Radio Frequency Plasma-enhanced Chemical Vapor Deposition PDF Author: George Tecos
Publisher:
ISBN:
Category : Crystalline polymers
Languages : en
Pages : 112

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Various deposition parameters have been adopted to deposit carbon-based thin films on silicon subtrates via Plasma-Enhanced Chemical Vapor Detection (PECVD) with a Radio-Frequency Plasma. We seek a recipe and formulation for carbon film deposition by varying the ratios of input gases and subtrate temperature, with the goal of observing these effects on the deposited carbon film. Characterization of the samples was carried out through various procedures, including the Ion Beam Analysis (IBA) techniques: Rutherford/Non-Rutherford Backscattering Spectrometry (RBS/NRBS), Elastic Recoil Detection Analysis (ERDA), and Raman Spectroscopy. This data was analyzed to determine the purity, quality, elemental compensation, and interface integrity of each respective sample. We conclude that the films deposited on Si subtrates are polymer-like carbon films with 30-35 at% C and 65-70 at% H. The interface between the film and subtrate was found to be abrupt. The effect of subtrate temperature on the microstructure of the deposited films was found to be inconclusive. This study will lay the basis for future explorations into Western Michigan University produced CVD carbon-based films, and investigate the properties of these unique and profitable materials.

Plasma-enhanced Chemical Vapor Deposition and Plasma Etching of Tungsten Films

Plasma-enhanced Chemical Vapor Deposition and Plasma Etching of Tungsten Films PDF Author: Ching Cheong Tang
Publisher:
ISBN:
Category :
Languages : en
Pages : 310

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Plasma Enhanced Chemical Vapor Deposition of Diamondlike Carbon Films Using Acetylene

Plasma Enhanced Chemical Vapor Deposition of Diamondlike Carbon Films Using Acetylene PDF Author: Sriram Vishwanathan
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 114

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Book Description
This study is focussed on the synthesis and characterization of diamondlike carbon (DLQ films deposited on silicon wafers and glass by plasma enhanced chemical vapor deposition (PECVD), using acetylene (C2H4) as a precursor. The process parameters, such as temperature, pressure, power and reactant gas flow rate have been systematically varied and their effects on the film growth rate and properties were investigated. The optimized deposition condition appeared to be at 150°C, 200mTorr, 200 Watts and flow rate = 25 sccm. For these conditions, the films were hard and found to have good adhesion to the substrate, and resistant to BF etching (49% BY diluted to 10% with distilled water). It was found that the adhesion of the DLC film to the substrate is good if the substrate is first etched with oxygen and CF4 prior to the deposition.

Modeling of Chemical Vapor Deposition of Tungsten Films

Modeling of Chemical Vapor Deposition of Tungsten Films PDF Author: Chris R. Kleijn
Publisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138

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Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.