Author: Robert Francis Harris
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
Book Description
Synthesis and Characterization of ([beta]-diketonate)zirconium Alkoxides for Low Temperature Chemical Vapor Deposition of Lead Zirconium Titanium Thin Films
Author: Robert Francis Harris
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
Book Description
Low Pressure Chemical Vapor Deposition (LPCVD) of Titanium Nitride
Author: Sameer Narsinha Dharmadhikari
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 110
Book Description
Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 110
Book Description
Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.
Synthesis, Characterization, and Reactivity of Low Valent Organotitanium Complexes
Author: Yujian You
Publisher:
ISBN:
Category :
Languages : en
Pages : 386
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 386
Book Description
Chemical Vapor Deposition and Characterization of Titanium Dioxide Thin Films
Author: David Christopher Gilmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
An Examination of Precursor Chemistry and Its Effect on Microstructure Development in Chemical Vapor Deposition of Titanium Dioxide and Aluminum Thin Films
Author: Charles John Taylor
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
Book Description
Synthesis of Titanium Dioxide Powders and Films at Low Temperatures
Author: Mani Gopal
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
Book Description
A Kinetic and Mechanistic Study of the Chemical Vapor Deposition of Titanium Dioxide Using Alkoxide Precursors
Author: Carl Pete Fictorie
Publisher:
ISBN:
Category :
Languages : en
Pages : 494
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 494
Book Description
Atomic Layer Deposition
Author: Tommi Kääriäinen
Publisher: John Wiley & Sons
ISBN: 1118062779
Category : Technology & Engineering
Languages : en
Pages : 274
Book Description
Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Publisher: John Wiley & Sons
ISBN: 1118062779
Category : Technology & Engineering
Languages : en
Pages : 274
Book Description
Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
The Optimization of a Low Temperature Thermal Chemical Vapor Deposition Route to Titanium Disulfide Thin Films
Author: Jeffrey R. Bottin
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 184
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 184
Book Description
Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide
Author: Lan Chen
Publisher:
ISBN:
Category : Silicon dioxide films
Languages : en
Pages : 120
Book Description
Publisher:
ISBN:
Category : Silicon dioxide films
Languages : en
Pages : 120
Book Description