Surface Passivation Studies of ALGAN/GAN High Electron Mobility Transistors PDF Download
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Author: David J. Meyer
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: David J. Meyer
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
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ISBN:
Category :
Languages : en
Pages : 0
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Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN(x) produced 70 to 75 percent recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recover of the current in GaN-cap HEMP structures and 80 to 90 percent recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months of aging.
Author: Sameer Jayanta Joglekar
Publisher:
ISBN:
Category :
Languages : en
Pages : 161
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Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconductors. In recent years, the versatile nature of this material has been exploited for a wide range of applications from solid state lighting to RF and microwave communication, as well as high power switching. The first part of this thesis discusses planar AlGaN/GaN transistors. GaN is a piezoelectric material, and changes in mechanical stress result in a change in the charge density which in turn affects the maximum current in AlGaN/GaN transistors. Finite element modelling techniques were applied to quantify the mechanical stress distribution in planar AlGaN/GaN RF transistors resulting from device fabrication, and operation in the on- and off-state. Thereafter, two important surface and interface effects were studied in this thesis. In the first one, the impact of surface cleanings, surface treatments and plasma-based dry etch conditions on two different types of ohmic contact technologies was investigated. Contact resistance measurements were correlated with surface characterization results. The second was that of interface positive charges at the Al2O3-GaN interface and the increase in electron density in the device resulting from them. In both these problems, a combination of device electrical measurements and material characterization techniques was used to establish direct correlations between device behavior and material properties. The second part of the thesis deals exclusively with nano-ribbon (NR) or fin-like AlGaN/GaN transistors. Fundamental transport properties of charge density and mobility in NR devices were studied in order to understand the difference in behavior of these devices from planar devices. The influence of passivation films on the charge density in these structures was investigated, using Al2O3 passivation as a specific example. Electron mobility degradation due to sidewall-scattering in NR devices was quantified using different mobility extraction methods based on device measurements. The thesis concludes with a potential application of NR AlGaN/GaN transistors for high linearity power amplification. A new kind of transistor with varying threshold voltages along the gate width is proposed to improve the DC and RF linearity of GaN-based devices.
Author: Minh-Trang Teresa Ha
Publisher:
ISBN:
Category :
Languages : en
Pages : 43
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AlGaN/GaN HEMTs are the most promising high power switching devices. The material properties of III-nitrides are exceptionally better than that of Si and GaAs. GaN-based devices have been recorded to have higher operating temperatures and higher breakdown field due to the wide bandgap. AlGaN/GaN heterostructures forms 2DEG without doping due to the spontaneous polarization. The performance and reliability of AlGaN/GaN HEMTs are dependent on the structure of the AlGaN/GaN heterostructures. Surface passivation has been proven to improve the 2DEG conductivity and device performance. 20 nm of plasma-enhanced chemical vapor deposition (PECVD) SiN was deposited on AlGaN/GaN HEMTs, and the PECVD SiN passivated sample demonstrated higher carrier concentration of 9.88 ? 1012 cm-2 compared to the un-passivated sample, 8.08 ? 1012 cm-2. High temperature annealing is an important processing step in the fabrication of the devices, and the effects have shown to improve the DC and RF performance. High temperature annealing may affect the structure and the 2DEG conductivity. The annealing effects modifies the AlGaN layer and the AlGaN/GaN interface. Herein, we present the a study on the thermal stability of the PECVD SiN passivation layer on AlGaN/GaN HEMT structures at high temperature anneals. High-resolution x-ray diffraction (HRXRD) measurements were used to investigate the strain of AlGaN layer, and Hall measurements were used to investigate the 2DEG conductivity. PECVD SiN passivated and un-passivated AGaN/GaN HEMTs structure underwent high temperature thermal anneals for 30 minutes in N2. The starting temperature of the annealing is 400?C with step of 50?C until degradation. Degradation was determined through Hall sheet resistivity and mobility measurements. The ending annealed temperature is 1000 ?C and 700 ?C for passivated and control samples, respectively. From no anneal to degradation temperature, the 2DEG conductivity dropped by 15% and 34% for passivated and un-passivated samples, respectively. The HRXRD measurements found the change in-plane strain of the AlGaN layer after high temperature anneals. Higher in-plane strain showed higher 2DEG conductivity. In-plane strain from no anneal to degradation temperature dropped from 2% and 7% for passivated and un-passivated samples, respectively. Therefore, the passivated sample demonstrated to be more stable at high temperatures. The SiN passivation layer adds tensile stress to the AlGaN layer thus increased the piezoelectric effect and 2DEG conductivity.
Author: Ekaterina Harvard
Publisher:
ISBN:
Category :
Languages : en
Pages : 230
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Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.
Author:
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Category :
Languages : en
Pages :
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Abstract : Surface leakage currents of AlGaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with Al2 O3 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22 eV for the high electric field, and the other trap level has a barrier height of 0.12 eV for the low electric field.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862539
Category : Science
Languages : en
Pages : 430
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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Lei Chen
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 60
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Author:
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Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
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Under the support of this contract, we have been successful in mitigating the current collapse that is found in nitride based high electron mobility transistors (HEMTs) that is responsible for low power performance from these devices. We have successfully and repeatedly grown oxide material that, along with surface cleaning recipes, reduce the surface states and reduce the device-device surface leakage. As part of the recipe development we have studied fundamental characteristics of the native oxides on GaN and AlGaN surfaces using XPS and compared the results to oxides generated by exposure to UV ozone, We have developed a lattice matched oxide, magnesium calcium oxide (M8CaO), and deposition recipe that provides for the lowest level of surface traps and thus the highest level of surface passivation. Along with this oxide, we have shown that a thin layer of scandium oxide (Sc203), approximately Sam thick, is sufficient for protection of environmental degradation of the MgCaO in environments of 100% humidity and elevated temperatures. This oxide/nitride interface is also able to withstand the processing temperatures of the nitride based HEMTs.
