Submicrometer-gate Indium Phosphide-based Field-effect Transistors for High-frequency Applications PDF Download
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Author: Jente Benedict Kuang
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Author: Jente Benedict Kuang
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Author: Daniel Gerard Ballegeer
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($fsb{t}$s) as well as extremely high power cutoff frequencies ($fsb{rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $fsb{t}$ and $fsb{rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies. The subject of this work is the investigation of the possibility of designing InP-based HFETs for use as high-power devices. The emphasis is not on obtaining a world-record high frequency power device; instead, the focus is on the critical issues involved when designing the devices for high power applications. Hence, the goal is to obtain an in-depth understanding of the internal physics of the FETs when they are operating as power devices, and in so doing, attempt to arrive at designs and techniques which will overcome some of the limitations of InP-based HFETs.
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 274
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Author: V. L. Wrick
Publisher:
ISBN:
Category :
Languages : en
Pages : 95
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Book Description
Technology development is presented for the development of an InP power Field Effect Transistor. Both ion implantation and vapor phase epitaxy results are presented as a means for providing an active channel. Processing technology (etching, ohmic contacts) is reviewed as well as a description of various approaches for gating n-type InP. Conclusions and plans for the last phase of the program are discussed. As a result of the first part of the program, work is to be concentrated on developing Junction Field Effect Transistor technology.
Author: Ronald Waldo Grundbacher
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author: Kyushik Hong
Publisher:
ISBN:
Category :
Languages : en
Pages : 532
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Author: Momčilo Pejović
Publisher: BoD – Books on Demand
ISBN: 9535131753
Category : Technology & Engineering
Languages : en
Pages : 194
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Book Description
In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Author: Dharmendra Singh Yadav
Publisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Author: Michael D. Biedenbender
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 758
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