Study of Ion Beam Assisted Deposition of Low Dislocation Density GaN Thin Films Using Molecular Beam Epitaxy PDF Download
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Author: Bentao Cui
Publisher:
ISBN:
Category :
Languages : en
Pages : 426
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Author: Bentao Cui
Publisher:
ISBN:
Category :
Languages : en
Pages : 426
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Book Description
Author: Agustin Gonzalez-elipe
Publisher: World Scientific
ISBN: 1783261048
Category : Science
Languages : en
Pages : 299
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Book Description
This book is an introductory manual for Ion Assisted Deposition (IAD) procedures of thin films. It is addressed to researchers, post-graduates and even engineers with little or no experience in the techniques of thin film deposition. It reviews the basic concepts related to the interaction of low energy ion beams with materials. The main procedures used for IAD synthesis of thin films and the main effects of ion beam bombardment on growing films, such as densification, stress, mixing, surface flattening and changes in texture are critically discussed. A description of some of the applications of IAD methods and a review of the synthesis by IAD of diamond-like carbon and cubic-boron nitride complete the book.
Author: T. Itoh
Publisher: Elsevier
ISBN: 0444599088
Category : Science
Languages : en
Pages : 458
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Book Description
This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 942
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Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
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Book Description
Author: Jerome J. Cuomo
Publisher: William Andrew
ISBN:
Category : Science
Languages : en
Pages : 464
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Book Description
This book, by 36 authorities on the subject, deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for synthesis of material in thin film form, and of the modification of thin film properties.
Author: Liang Dong
Publisher:
ISBN:
Category :
Languages : en
Pages : 302
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 20
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As-received wafers of n- and p-type 6H-SiC(0001) were etched via gaseous HCl in H2 at 1350 deg C at NASA-Lewis to remove cutting and polishing scratches from the surface; however, etch pits were created. GaN films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and NH3 seeded into highly expanded He gas streams. A two-step deposition process that repeatedly resulted in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by SEM, RHEED and AES and film character correlated to deposition conditions. Assembly of a new dual seeded beam deposition and film analysis facility is underway. In addition, the main chamber of a dual Colutron ion-beam deposition system for the deposition of high-quality SiC and GaN films is nearing completion. Ion sources have been assembled and leak-tested. Preliminary results on the characterization of a seeded supersonic molecular beam source are presented. A room temperature beam of 10% NH3 with a source pressure of 25 kTorr and a 25 micrometers nozzle produces NH3 molecules with mean energies of 0.264 eV and an energy spread of 0.068 eV. Modifications to the existing system are discussed.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 622
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Book Description
