Studies of Gallium Nitride Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition PDF Download
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Author: Jingli Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 218
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Book Description
Author: Jingli Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 218
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Book Description
Author: Yankun Fu
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
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Author: Yi Fu
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages :
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Book Description
In this dissertation, GaN growth on porous templates by metalorganic chemical vapor deposition (MOCVD) was studied. The motivation of this research is pursuing an effective reduction of defects in GaN by its submicron-scale and nano-scale epitaxial lateral overgrowth (ELO) on these porous templates, which included porous TiN/GaN (P-TiN), imprint lithography patterned Ti/GaN (IL-Ti), carbon-face nano-porous SiC (C-PSC), and silicon-face nano-porous SiC (Si-PSC). The porous TiN/GaN was formed in situ in MOCVD reactor by annealing a Ti-covered GaN seed layer. This simplicity makes the GaN ELO on the P-TiN more cost-efficient than the conventional ELO which requires ex situ photolithography and/or etching. Both the GaN nano-ELO and the GaN micron-ELO could be realized on P-TiN by controlling the GaN nucleation scheme. The reduction efficacy of edge threading dislocation (TD) was ~15 times. The optical characterization indicated that the non-radiative point-defects in GaN grown were reduced significantly on the P-TiN. The imprint lithography patterned Ti/GaN had uniformly distributed submicron Ti pads on GaN seed layer. These Ti pads acted as GaN ELO masks. The TD reduction efficacy of the IL-Ti was only ~2 due to the low coverage of Ti (~25%) on the GaN seed layer and the low pressure (30 Torr) employed during GaN ELO. Even with a small reduction of TDs, the point-defects in GaN were effectively lowered by the IL-Ti. Hydrogen polishing, sacrificial oxidation, and chemical mechanical polishing were employed to remove surface damage on the PSC substrates. Nitrogen-polarity GaN grown on the C-PSC was highly dislocated because the rough surface of C-PSC induced strong misorientation between GaN nucleation islands. The efficacy of Si-PSC on defect reduction primarily depended on the GaN nucleation schemes. A high density of GaN nano-nucleation-islands was required to realize the GaN nano-ELO extensively. With such a nucleation scheme, the GaN grown on Si-PSC had a ~20 times reduction on the density of the mixed and screw TDs compared with control sample. This growth method is promising for effective defect reduction within a small GaN thickness. Reducing the GaN nucleation density further lowered the TD density but also diminished the efficacy of Si-PSC. These results were explained by a growth model based on the mosaic structure of GaN.
Author: Hossein Rabiee Golgir
Publisher:
ISBN: 9780355139907
Category : Chemical vapor deposition
Languages : en
Pages : 0
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The m-plane-oriented gallium nitride nanoplates were successfully grown on silicon substrates at 450 °C, using CO2 laser-assisted metal organic chemical vapor deposition with perpendicular geometries.
Author: William Edward Fenwick
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages :
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Book Description
ZnO, because of its similar lattice constant and thermal expansion coefficient, is a promising substrate for growth of low defect-density GaN. The major hurdles for GaN growth on ZnO are the instability of ZnO in a hydrogen atmosphere and out-diffusion of zinc and oxygen from the substrate. A process was developed for the MOCVD growth of wurtzite GaN and InxGa1-xN on ZnO, and the structural and optical properties of these films were studied. High zinc and oxygen concentrations remained an issue, however, and the diffusion of zinc and oxygen into the subsequent GaN layer was studied more closely.
Author: Fumio Shimura
Publisher: Elsevier
ISBN: 0323150489
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Author: Bryan Stephen Shelton
Publisher:
ISBN:
Category :
Languages : en
Pages : 136
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Book Description
Author: Dirk Ehrentraut
Publisher: Springer Science & Business Media
ISBN: 3642048307
Category : Science
Languages : en
Pages : 337
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Book Description
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author: Ying Chen
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
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Book Description
Author: F. A. Ponce
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1008
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Book Description
This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
