Structural Imperfections in Silicon P-n Junctions PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Structural Imperfections in Silicon P-n Junctions PDF full book. Access full book title Structural Imperfections in Silicon P-n Junctions by . Download full books in PDF and EPUB format.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 118
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 118
Get Book Here
Book Description
Author: H. Queisser
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Get Book Here
Book Description
Author: A. Goetzberger
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 118
Get Book Here
Book Description
Author: V. I. Talanin
Publisher: Cambridge Scholars Publishing
ISBN: 152752342X
Category : Science
Languages : en
Pages : 281
Get Book Here
Book Description
Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 484
Get Book Here
Book Description
Author: James H. Crawford
Publisher: Springer Science & Business Media
ISBN: 1468409042
Category : Science
Languages : en
Pages : 494
Get Book Here
Book Description
Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.
Author: United States. National Aeronautics and Space Administration
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1556
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 712
Get Book Here
Book Description
Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
Get Book Here
Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Author: K. V. Ravi
Publisher: John Wiley & Sons
ISBN:
Category : Semiconductors
Languages : en
Pages : 408
Get Book Here
Book Description
