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Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 1000404935
Category : Science
Languages : en
Pages : 275
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Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 1000404935
Category : Science
Languages : en
Pages : 275
Get Book Here
Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 9781003055723
Category : Science
Languages : en
Pages : 0
Get Book Here
Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author: Yongke Sun
Publisher: Springer Science & Business Media
ISBN: 1441905529
Category : Technology & Engineering
Languages : en
Pages : 353
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Book Description
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Author: Suman Lata Tripathi
Publisher: John Wiley & Sons
ISBN: 1119755085
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.
Author: Kalyan Biswas
Publisher: John Wiley & Sons
ISBN: 1394188943
Category : Technology & Engineering
Languages : en
Pages : 340
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Book Description
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Author: Dominic Schepis
Publisher: Elsevier
ISBN: 044313524X
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
Handbook of Thin Film Deposition, Fifth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry. When pursuing patents, there is a phase called 'reduction to practice' where the idea for a technology transitions from a concept to actual use. The section 'Thin Film Reduction to Practice' includes chapters that review the most relevant methods to fabricate thin films towards practical applications. Then, the latest applications of thin film deposition technologies are discussed. Handbook of Thin Film Deposition, 5th Edition is suitable for materials scientists and engineers in academia and working in semiconductor R&D. - Offers a practical survey of thin film technologies including design, fabrication, and reliability - Covers core processes and applications in the semiconductor industry and discusses latest advances in new thin film development - Features new chapters that review methods on front-end and back-end thin films
Author: Tom Proulx
Publisher: Springer Science & Business Media
ISBN: 1461402255
Category : Technology & Engineering
Languages : en
Pages : 142
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Book Description
Engineering Applications of Residual Stress represents one of eight volumes of technical papers presented at the Society for Experimental Mechanics Annual Conference on Experimental and Applied Mechanics, held at Uncasville, Connecticut, June 13-16, 2011. The full set of proceedings also includes volumes on Dynamic Behavior of Materials, Mechanics of Biological Systems and Materials, Mechanics of Time-Dependent Materials and Processes in Conventional and Multifunctional Materials, MEMS and Nanotechnology; Optical Measurements, Modeling and, Metrology; Experimental and Applied Mechanics, and Thermomechanics and Infra-Red Imaging.
Author: Han-Ming Wu
Publisher: The Electrochemical Society
ISBN: 1566778069
Category : Science
Languages : en
Pages : 1203
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Book Description
Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.
Author: National Research Council
Publisher: National Academies Press
ISBN: 0309127289
Category : Technology & Engineering
Languages : en
Pages : 36
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Book Description
The Materials Science and Engineering Laboratory (MSEL) of the National Institute of Standards and Technology (NIST) works with industry, standards bodies, universities, and other government laboratories to improve the nation's measurements and standards infrastructure for materials. A panel of experts appointed by the National Research Council (NRC) assessed the four divisions of MSEL, by visiting these divisions and reviewing their activities. This book concludes that, for the selected portion of the MSEL programs reviewed, the staff, the projects, and many facilities are outstanding. The projects are clearly focused on the mission of MSEL. The facilities and equipment are rationally upgraded within budget constraints, with several facilities being unique; the funding provided through the America COMPETES Act of 2007 is being used effectively. Division chiefs and staff evinced high morale, attributable to several factors: clear definitions of expectations and of the processes for realizing them, strong support of the MSEL from NIST leadership and of NIST generally from the President and from the Congress (through the American Competitiveness Initiative and the America COMPETES Act), and positive feedback from customers.
Author: Margrit Hanbücken
Publisher: John Wiley & Sons
ISBN: 3527639551
Category : Technology & Engineering
Languages : en
Pages : 354
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Book Description
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
