State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V PDF Download
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Author: H. M. Ng
Publisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Author: H. M. Ng
Publisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Author: Timothy David Veal
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
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Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1908979941
Category :
Languages : en
Pages : 440
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Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.
Author: R. F. Kopf
Publisher: The Electrochemical Society
ISBN: 9781566773911
Category : Technology & Engineering
Languages : en
Pages : 422
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Author: J. Wang
Publisher: The Electrochemical Society
ISBN: 1566776538
Category : Compound semiconductors
Languages : en
Pages : 240
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Book Description
This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.
Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773690
Category : Technology & Engineering
Languages : en
Pages : 380
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Book Description
Author: Hadis Morkoç
Publisher: John Wiley & Sons
ISBN: 3527628460
Category : Technology & Engineering
Languages : en
Pages : 1311
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Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Author: Edward B. Stokes
Publisher: The Electrochemical Society
ISBN: 9781566773492
Category : Technology & Engineering
Languages : en
Pages : 292
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Author: Xuying Dong
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Author:
Publisher:
ISBN:
Category : Electrochemistry
Languages : en
Pages : 1066
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Book Description
