Stability of Amorphous Silicon Alloy Materials and Devices PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Stability of Amorphous Silicon Alloy Materials and Devices PDF full book. Access full book title Stability of Amorphous Silicon Alloy Materials and Devices by Stafford. Download full books in PDF and EPUB format.
Author: Stafford
Publisher: American Inst. of Physics
ISBN: 9780883183571
Category : Science
Languages : en
Pages : 385
Get Book Here
Book Description
Author: Stafford
Publisher: American Inst. of Physics
ISBN: 9780883183571
Category : Science
Languages : en
Pages : 385
Get Book Here
Book Description
Author:
Publisher:
ISBN: 9789810233501
Category :
Languages : en
Pages : 385
Get Book Here
Book Description
Author: B. L. Stafford
Publisher:
ISBN:
Category :
Languages : en
Pages : 385
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
In this report, the authors describe the work done to improve the material and device properties of a-Si:H and a-(Si, Ge):H alloys prepared using electron cyclotron resonance (ECR) plasma deposition and to understand the growth chemistry. Major results were obtained in the following areas: (1) Influence of plasma chemistry on properties and stability of a-Si:H single-junction solar cells; (2) Fabrication of good-quality tandem-junction cells. The authors made tandem-junction a-Si/a-Si cells with excellent voltages and fill factors using the H-ECR process; (3) Growth of high-quality a-(Si, Ge):H films using the ECR deposition process; (4) Fabrication of single-junction devices in a-(Si, Ge):H for diagnosing the material; and (5) Graded-gap cells in a-(Si, Ge):H. Good devices were produced using a graded-gap I-layer. In summary, the most important finding from this research has been that plasma chemistry plays a very important role in determining the properties of the materials, particularly the properties of the a-(Si, Ge):H alloy system. Even in a-Si:H, plasma chemistry plays a role in determining stability. This result suggests that by deliberately changing the chemistry of deposition, one may be able to further improve the a-(Si, Ge):H materials system and make its properties comparable to the properties of a-Si:H. The ECR reactor has proved to be a very useful chemical tool, with excellent control over growth chemistry.
Author: B. L. Stafford
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 416
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 34
Get Book Here
Book Description
This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Author:
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 9789971506193
Category : Science
Languages : en
Pages : 742
Get Book Here
Book Description
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
