SPICE Parameter Extraction for MOSFET Modeling in Analog Circuit Design PDF Download
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Author: Wen Lu
Publisher:
ISBN:
Category : Electronic circuit design
Languages : en
Pages : 200
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Book Description
Author: Wen Lu
Publisher:
ISBN:
Category : Electronic circuit design
Languages : en
Pages : 200
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Book Description
Author: Manisha Arora
Publisher:
ISBN:
Category :
Languages : en
Pages : 34
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Book Description
A method for extracting the three parameters of the well-known level-2 Spice MOSFET-model namely threshold voltage, transconductance parameter, and channel length modulation is presented. Currently circuit design is based on CAD tools using complex model parameters obtained by laborious and expensive methods. While this is essential to design reliable systems on a chip, simpler analog techniques can be used for process monitoring. This work presents simple on-chip analog circuits that can characterize MOSFET just by measuring voltages and currents thus reducing the time and complexity of measurement. For this, on-chip implementation of two parameter extraction circuits are presented. The first circuit is for determining the threshold voltage Vth, and transconductance parameter (k). The second is to determine the channel-length modulation parameter (l). These circuits generate voltages or currents proportional to model parameters Vth, k and l. Simulation results and measured values from these circuits fabricated using TSMC 180nm process are presented. Results are also compared with accurate model parameters currently available in CAD tools to estimate the level of precision attainable using this method
Author: Daniel Foty
Publisher: Prentice Hall
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 680
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Book Description
This book will help CMOS circuit designers make the best possible use of SPICE models, and will prepare them for new models that may soon be introduced. Introduces SPICE modeling and its use in CMOS circuit design. Presents the formalism of model building and the semiconductor physics of MOS structures. Covers each important SPICE model, showing how to choose the appropriate model. Discusses the popular HSPICE Level 28, as well as Levels 1-3, BSIM 1-3, and MOS Model 9. Presents techniques for accounting for systematic process variations. Describes new model candidates, including the Power-Lane Model, the PCIM Model, and the EKV Model. Includes extensive examples throughout. Practicing engineers and scientists in the semiconductor industry; engineering faculty and students.
Author: Chenming Hu
Publisher: World Scientific
ISBN: 9814390968
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development.The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Author: Yuhua Cheng
Publisher: Springer Science & Business Media
ISBN: 0306470500
Category : Technology & Engineering
Languages : en
Pages : 467
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Book Description
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author: Márcio Cherem Schneider
Publisher: Cambridge University Press
ISBN: 052111036X
Category : Computers
Languages : en
Pages : 505
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Book Description
The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Author: Ao Zhang
Publisher: World Scientific
ISBN: 9811255377
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
Author: Sai Subhash Sripada
Publisher:
ISBN: 9781339070025
Category : Electronic circuit design
Languages : en
Pages : 65
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Book Description
This paper proposes a simple extraction technique which can be used to extract device parameters of any power MOSFET easily. It only requires the use of transfer and output characteristic graphs to extract threshold voltage and transconductance and a few formulas to extract the parasitic capacitances of the power device. The extraction technique is presented in an easy to understand step by step procedure. The parameters extracted using this process are used to develop a spice model. Transient analysis is done for the extracted model and the resistive switching performance is compared with the datasheet in order to prove the effectiveness of the extraction technique used. Inductive switching is also done for the extracted model and the effect of varying the parameters of the MOSFET on inductive switching times is observed. Finally, this observation is then used to develop a new mathematical SiC power MOSFET model which has better inductive switching times than the extracted model and the thesis is concluded.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as a vertical MOSFET in SiC are also presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. Considering the SiC material processing limitations and feedback from the system level application group, an application specific SiC power MOSFET structure has been proposed. The device dimensions were chosen to obtain the desired specific on-resistance and breakdown voltage of the power MOSFET. A good agreement between the analytical model and the MEDICI simulation is demonstrated. The temperature models include effects of temperature on the threshold voltage, carrier mobility, the body leakage current, and the drain and source contact region resistances for a lateral MOSFET and the effects of temperature on the threshold voltage, carrier mobility, the body leakage current, drift region resistance and channel resistance for a vertical MOSFET. The temperature dependent compensating current elements are introduced in the model. These compensating currents contribute to the total current at high temperatures. A rigorous testing and characterization has been carried out on a 4H-SiC DIMOS transistor test device. SPICE parameters have been extracted from the measurements and a SPICE model for the DIMOS transistor has been developed. The models developed in this research will not only help the SiC device researchers in the device behavioral study but will also provide a SPICE model for circuit designers.
Author: Christopher Anthony Freymuth
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 184
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Book Description
