Solid State Devices 1984 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Solid State Devices 1984 PDF full book. Access full book title Solid State Devices 1984 by Jean-Pierre Noblanc. Download full books in PDF and EPUB format.
Author: Jean-Pierre Noblanc
Publisher:
ISBN: 9780444869425
Category : Semiconductors
Languages : en
Pages : 585
Get Book
Book Description
Author: Jean-Pierre Noblanc
Publisher:
ISBN: 9780444869425
Category : Semiconductors
Languages : en
Pages : 585
Get Book
Book Description
Author: Claude Leroy
Publisher: World Scientific
ISBN: 9814390046
Category : Science
Languages : en
Pages : 430
Get Book
Book Description
This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application. The content and coverage of the book benefit from the extensive experience of the two authors who have made significant contributions as researchers as well as in teaching physics students in various universities.
Author: Takahiko Misugi
Publisher: Springer Science & Business Media
ISBN: 1475797745
Category : Science
Languages : en
Pages : 311
Get Book
Book Description
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Author: Mort
Publisher: CRC Press
ISBN: 1351084267
Category : Technology & Engineering
Languages : en
Pages : 253
Get Book
Book Description
In Summary, the objective of this book is to present in one volume a review of the plasma deposition process and the present understanding of the most important and widely used plasma deposited thin film materials, devices and their applications.
Author: Wayne M. Moreau
Publisher: Springer Science & Business Media
ISBN: 1461308852
Category : Technology & Engineering
Languages : en
Pages : 937
Get Book
Book Description
Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-based circuits. In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography. Lithography, as adopted by the semiconductor industry, is the process of drawing or printing the pattern of an integrated circuit in a resist material. The pattern is formed and overlayed to a previous circuit layer as many as 30 times in the manufacture of logic and memory devices. With the resist pattern acting as a mask, a permanent device structure is formed by subtractive (removal) etching or by additive deposition of metals or insulators. Each process step in lithography uses inorganic or organic materials to physically transform semiconductors of silicon, insulators of oxides, nitrides, and organic polymers, and metals, into useful electronic devices. All forms of electromagnetic radiation are used in the processing. Lithography is a mUltidisciplinary science of materials, processes, and equipment, interacting to produce three-dimensional structures. Many aspects of chemistry, electrical engineering, materials science, and physics are involved. The purpose of this book is to bring together the work of many scientists and engineers over the last 10 years and focus upon the basic resist materials, the lithographic processes, and the fundamental principles behind each lithographic process.
Author: Kenneth J Button
Publisher: Academic Press
ISBN: 1483257452
Category : Technology & Engineering
Languages : en
Pages : 264
Get Book
Book Description
Topics in Millimeter Wave Technology is a compendium of papers dealing with plasma waves, TUNNETT diodes, and solid-state devices. One paper describes the application of the TUNNET diode, a semiconductor with a coherent signal source of over 100 GHz to 1000 GHz. The paper notes the possibility of achieving more than 1000 GHz through sophisticated device fabrication technology. Another paper discusses the use of computer-aided testing of superconductor-insulator-superconductor (SIS) junction whose mixing properties are effected by the ski-sloped shape of the current-voltage curve. Such testing methods are useful at fixed or variable temperatures from 15 K to 300 K. One paper reviews the collective Thomson scattering theory, including the application of the multichannel far-infrared scattering system in the basic tokamak plasma physics. Another paper discusses the static induction transistor for very high frequency operation as the millimeter to submillimeter wave region is the ideal static induction transistor in ballistic devices. This review material can be helpful for nuclear scientists, nuclear engineers, students of physics, and researchers involved in plasma physics and semiconductor technology.
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 944
Get Book
Book Description
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 9783211206874
Category : Technology & Engineering
Languages : en
Pages : 594
Get Book
Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 438
Get Book
Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 956
Get Book
Book Description
