Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Phase I conclusively showed the feasibility of rational design of single molecule-source reagents that could lead to improvements in the chemical vapor deposition of stoichiometric Beta silicon carbide. Four single molecule sources were synthesized, their decomposition pathways studied, and their utility in Beta-silicon carbide CVD investigated. Dramatic differences in the CVD process resulted from small changes in the reagent structure. A strained cyclic molecule, 1,3-disilacyclobutane, allowed growth of a Beta-silicon carbide film at a temperature>300 deg C lower than was possible with a similar straight chain reagent. Furthermore, the highest quality film was grown from the analogous chlorinated cyclic source reagent: 1,1,3,3 tetrachloro-1,3- disilacyclobutane. We propose that decomposition of the cyclic precursors directly produces intermediates that can lead to deposition of stoichiometric silicon carbide. The Phase I results clearly showed that Beta-silicon carbide CVD can be improved by molecular engineering of the source reagents. Cyclic precursors are promising for both the deposition of single crystal films at high temperature and for polycrystalline and single crystal films at low temperature. In Phase II we will optimize the precursor for low temperature deposition and the integration of silicon and silicon carbide HBT device structures.
Single Molecule Source Reagents for Chemical Vapor Deposition of B- Silicon Carbide
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Phase I conclusively showed the feasibility of rational design of single molecule-source reagents that could lead to improvements in the chemical vapor deposition of stoichiometric Beta silicon carbide. Four single molecule sources were synthesized, their decomposition pathways studied, and their utility in Beta-silicon carbide CVD investigated. Dramatic differences in the CVD process resulted from small changes in the reagent structure. A strained cyclic molecule, 1,3-disilacyclobutane, allowed growth of a Beta-silicon carbide film at a temperature>300 deg C lower than was possible with a similar straight chain reagent. Furthermore, the highest quality film was grown from the analogous chlorinated cyclic source reagent: 1,1,3,3 tetrachloro-1,3- disilacyclobutane. We propose that decomposition of the cyclic precursors directly produces intermediates that can lead to deposition of stoichiometric silicon carbide. The Phase I results clearly showed that Beta-silicon carbide CVD can be improved by molecular engineering of the source reagents. Cyclic precursors are promising for both the deposition of single crystal films at high temperature and for polycrystalline and single crystal films at low temperature. In Phase II we will optimize the precursor for low temperature deposition and the integration of silicon and silicon carbide HBT device structures.
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Phase I conclusively showed the feasibility of rational design of single molecule-source reagents that could lead to improvements in the chemical vapor deposition of stoichiometric Beta silicon carbide. Four single molecule sources were synthesized, their decomposition pathways studied, and their utility in Beta-silicon carbide CVD investigated. Dramatic differences in the CVD process resulted from small changes in the reagent structure. A strained cyclic molecule, 1,3-disilacyclobutane, allowed growth of a Beta-silicon carbide film at a temperature>300 deg C lower than was possible with a similar straight chain reagent. Furthermore, the highest quality film was grown from the analogous chlorinated cyclic source reagent: 1,1,3,3 tetrachloro-1,3- disilacyclobutane. We propose that decomposition of the cyclic precursors directly produces intermediates that can lead to deposition of stoichiometric silicon carbide. The Phase I results clearly showed that Beta-silicon carbide CVD can be improved by molecular engineering of the source reagents. Cyclic precursors are promising for both the deposition of single crystal films at high temperature and for polycrystalline and single crystal films at low temperature. In Phase II we will optimize the precursor for low temperature deposition and the integration of silicon and silicon carbide HBT device structures.
Single Molecule Source Reagents for CVD of Beta Silicon Carbide
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting point. Use of silicon carbide thin films is hampered, however, by the inability to reproducibly grow stoichiometric films free from excess silicon or carbon. The principal difficulty is that absolutely reproducible flows of the source gases cannot be provided with existing gas flow control equipment. The very finest gas flow control equipment has been used in the CVD systems, but small disparities remain between successive deposited films. The production of practical beta silicon carbide devices has been hindered by the lack of a reproducible process for deposition of stoichiometric beta silicon carbide films.
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting point. Use of silicon carbide thin films is hampered, however, by the inability to reproducibly grow stoichiometric films free from excess silicon or carbon. The principal difficulty is that absolutely reproducible flows of the source gases cannot be provided with existing gas flow control equipment. The very finest gas flow control equipment has been used in the CVD systems, but small disparities remain between successive deposited films. The production of practical beta silicon carbide devices has been hindered by the lack of a reproducible process for deposition of stoichiometric beta silicon carbide films.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572
Book Description
One-dimensional Numerical Investigation of the Chemical Vapor Deposition of Silicon Carbide in a Vertical Disk Reactor
Author: Chigozie Mbeledogu
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Book Description
Synthesis of Silicon Carbide by Chemical Vapor Deposition
Author: T. Hirai
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
Book Description
One-dimensional Numerical Investigation of the Chemical Vapor Deposition of Silicon Carbide in a Vertifcal Disk Reactor
Author: Chigozie Mbeledogu
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Book Description
Government reports annual index
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 1828
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 1828
Book Description
Government Reports Announcements & Index
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1768
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1768
Book Description
Chemical Vapor Deposition of Silicon Carbide
Author: Schyi-yi Wu
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 322
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 322
Book Description
Growth of Single Crystal Silicon Carbide by Halide Chemical Vapor Deposition
Author: Mark A. Fanton
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description