Simulation numérique par méthode Monte Carlo de la gravure du silicium en plasma fluoré

Simulation numérique par méthode Monte Carlo de la gravure du silicium en plasma fluoré PDF Author: Grégory Marcos
Publisher:
ISBN:
Category :
Languages : fr
Pages : 200

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Book Description
Le projet de cette thèse porte sur l'étude de la gravure sèche de tranchées fines et profondes dans du silicium. Ce type de procédé est utilisé dans la fabrication des dispositifs de puissance. Le protocole expérimental s'appuie sur un procédé plasma cryogénique au cours duquel une décharge radiofréquence de SF6/O2 est initiée dans un réacteur ICP. A partir des résultats fournis par l'étude empirique, le travail de recherche a consisté en l'élaboration d'un modèle de gravure basé sur la méthode Monte Carlo. Ce simulateur est composé d'un module calculant les fonctions de distribution du flux d'ions incident. Il intègre leur trajectoire dans la gaine plasma en considérant les processus de collisions élastiques et à transfert de charge. Suivant les conditions initiales du procédé, il fournit donc des données cinétiques d'entrée au module de déplacement du substrat. Le modèle de gravure décrit les principaux mécanismes de surface produits par les espèces réactives (atomes de fluor et d'oxygène, dont le flux est supposé isotrope) et le bombardement ionique. Il introduit l'adsorption/désorption, la gravure chimique spontanée, la pulvérisation préférentielle, la réflexion isotrope ou spéculaire des particules, le redépôt des produits de gravure et la croissance de la couche de passivation. Utilisé comme outil d'analyse et de recherche prédictive, ce modèle a permis de montrer l'incidence de certains paramètres dans la croissance de défauts de gravure. Ainsi, la réflexion des ions sur les flancs inclinés du masque constitue l'une des causes de formation du bowing (sur-gravure latérale). L'intensité de l'undercut (gravure sous masque) dépend étroitement des propriétés du flux de neutres et de sa réactivité avec le substrat. Par comparaison avec l'expérience, il apparaît que le redépôt, responsable de la rugosité et du rétrécissement des motifs, est peu important. Enfin, le simulateur révèle une forte corrélation entre le régime de passivation et les cinétiques de gravure.

Simulation numérique par méthode Monte Carlo de la gravure du silicium en plasma fluoré

Simulation numérique par méthode Monte Carlo de la gravure du silicium en plasma fluoré PDF Author: Grégory Marcos
Publisher:
ISBN:
Category :
Languages : fr
Pages : 200

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Book Description
Le projet de cette thèse porte sur l'étude de la gravure sèche de tranchées fines et profondes dans du silicium. Ce type de procédé est utilisé dans la fabrication des dispositifs de puissance. Le protocole expérimental s'appuie sur un procédé plasma cryogénique au cours duquel une décharge radiofréquence de SF6/O2 est initiée dans un réacteur ICP. A partir des résultats fournis par l'étude empirique, le travail de recherche a consisté en l'élaboration d'un modèle de gravure basé sur la méthode Monte Carlo. Ce simulateur est composé d'un module calculant les fonctions de distribution du flux d'ions incident. Il intègre leur trajectoire dans la gaine plasma en considérant les processus de collisions élastiques et à transfert de charge. Suivant les conditions initiales du procédé, il fournit donc des données cinétiques d'entrée au module de déplacement du substrat. Le modèle de gravure décrit les principaux mécanismes de surface produits par les espèces réactives (atomes de fluor et d'oxygène, dont le flux est supposé isotrope) et le bombardement ionique. Il introduit l'adsorption/désorption, la gravure chimique spontanée, la pulvérisation préférentielle, la réflexion isotrope ou spéculaire des particules, le redépôt des produits de gravure et la croissance de la couche de passivation. Utilisé comme outil d'analyse et de recherche prédictive, ce modèle a permis de montrer l'incidence de certains paramètres dans la croissance de défauts de gravure. Ainsi, la réflexion des ions sur les flancs inclinés du masque constitue l'une des causes de formation du bowing (sur-gravure latérale). L'intensité de l'undercut (gravure sous masque) dépend étroitement des propriétés du flux de neutres et de sa réactivité avec le substrat. Par comparaison avec l'expérience, il apparaît que le redépôt, responsable de la rugosité et du rétrécissement des motifs, est peu important. Enfin, le simulateur révèle une forte corrélation entre le régime de passivation et les cinétiques de gravure.

The Monte Carlo Method for Semiconductor Device Simulation

The Monte Carlo Method for Semiconductor Device Simulation PDF Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 3709169631
Category : Technology & Engineering
Languages : en
Pages : 370

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Book Description
This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Monte Carlo Simulation in Statistical Physics

Monte Carlo Simulation in Statistical Physics PDF Author: Kurt Binder
Publisher: Springer Science & Business Media
ISBN: 3662033364
Category : Science
Languages : en
Pages : 163

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Book Description
Dealing with the computer simulation of thermodynamic properties of many-body condensed-matter systems that use random numbers generated by a computer, this book describes the theoretical background of several variants of Monte Carlo methods. The result is a systematic course allowing newcomers to perform these simulations for themselves and to analyze their results. This third edition has been updated and expanded by a new chapter on important recent developments in the Monte Carlo methodology.

Silicon Surfaces and Formation of Interfaces

Silicon Surfaces and Formation of Interfaces PDF Author: Jarek Dabrowski
Publisher: World Scientific
ISBN: 9789810232863
Category : Science
Languages : en
Pages : 580

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Book Description
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Handbook of Advanced Plasma Processing Techniques

Handbook of Advanced Plasma Processing Techniques PDF Author: R.J. Shul
Publisher: Springer Science & Business Media
ISBN: 3642569897
Category : Technology & Engineering
Languages : en
Pages : 664

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Book Description
Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

Diffusion in Materials - DIMAT 2011

Diffusion in Materials - DIMAT 2011 PDF Author: I. Bezverkhyy
Publisher:
ISBN: 9783037853979
Category : Diffusion
Languages : en
Pages : 0

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Book Description
The International Conference on Diffusion in Materials (DIMAT) is the benchmark conference series for diffusion in solids. DIMAT 2011 was organized by the University of Bourgogne in association with CNRS, Dijon (France). The conference showcased new results concerning theoretical tools as well as applied research approaches. Diffusion processes affect all types of materials: nanomaterials, materials for energy, metallurgy, glasses and ceramics, but each requires its own numerical tools.Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume comprises most of the contributions presented at DIMAT 2011: 4 plenary lectures delivered by famous high-level scientists plus 88 contributions in the form of keynote lectures, talks and posters.

Scientific Canadian Mechanics' Magazine and Patent Office Record

Scientific Canadian Mechanics' Magazine and Patent Office Record PDF Author: Canada. Patent Office
Publisher:
ISBN:
Category : Copyright
Languages : en
Pages : 1070

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Book Description


Cambridge Yearbook of European Legal Studies, Vol 13, 2010-2011

Cambridge Yearbook of European Legal Studies, Vol 13, 2010-2011 PDF Author: Catherine Barnard
Publisher: Bloomsbury Publishing
ISBN: 184731869X
Category : Law
Languages : en
Pages : 337

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Book Description
The Cambridge Yearbook of European Legal Studies provides a forum for the scrutiny of significant issues in EU Law, the law of the European Convention on Human Rights, and Comparative Law with a 'European' dimension, and particularly those issues which have come to the fore during the year preceding publication. The contributions appearing in the collection are commissioned by the Centre for European Legal Studies (CELS) Cambridge, a research centre in the Law Faculty of the University of Cambridge specialising in European legal issues. The papers presented are at the cutting edge of the fields which they address, and reflect the views of recognised experts drawn from the University world, legal practice, and the institutions of both the EU and its Member States. Inclusion of the comparative dimension brings a fresh perspective to the study of European law, and highlights the effects of globalisation of the law more generally, and the resulting cross fertilisation of norms and ideas that has occurred among previously sovereign and separate legal orders. The Cambridge Yearbook of European Legal Studies is an invaluable resource for those wishing to keep pace with legal developments in the fast moving world of European integration. INDIVIDUAL CHAPTERS Please click on the link below to purchase individual chapters from Volume 13 through Ingenta Connect: www.ingentaconnect.com SUBSCRIPTION TO SERIES To place an annual online subscription or a print standing order through Hart Publishing please click on the link below. Please note that any customers who have a standing order for the printed volumes will now be entitled to free online access. www.hartjournals.co.uk/cyels/subs Editorial Advisory Board: Albertina Albors-Llorens, John Bell, Alan Dashwood, Simon Deakin, David Feldman, Richard Fentiman, Angus Johnston, John Spencer Founding Editors: Alan Dashwood and Angela Ward Ius Commune Prize 2012 Alexandre Saydé wrote Chapter 15 in this volume entitled: 'One Law, Two Competitions: An Enquiry into the Contradictions of Free Movement Law' and we are delighted to announce that he has been awarded the Ius Commune Prize 2012.

Unidentified

Unidentified PDF Author: Robert Salas
Publisher: Career Press
ISBN: 9781601633422
Category : Body, Mind & Spirit
Languages : en
Pages : 0

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Book Description
In 1969 the U.S. Air Force issued a statement that read' "No UFO reported, investigated and evaluated by the Air Force was ever an indication of threat to our national security." This statement is patently false. It has been proven untrue by the testimony of many military officers and airmen and documentation of incidents involving UFOs and nuclear weapons, testimonies of which the U.S. Air Force was fully aware. Unidentified details many of these testimonies, some for the first time. As partial justification for its position, the Air Force cites a University of Colorado study that was contracted and paid for by federal funds. Unidentified reveals how this study was actually just another part of the plan to cover up the reality of the UFO phenomenon. For the first time, Unidentified publishes evidence that the investigators for the Colorado study knew about the UFO-related missile shutdown incidents but did not investigate them or include them in their final report.

International Humanitarian Law and Terrorism

International Humanitarian Law and Terrorism PDF Author: Andrea Bianchi
Publisher: Hart Publishing
ISBN: 9781849461375
Category : Law
Languages : en
Pages : 407

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Book Description
This book carefully and thoroughly analyses the legal questions raised by the phenomenon of terrorism, and past and recent efforts to fight it, from the perspective of international humanitarian law (IHL). The objective is to substantially contribute to a better understanding of the issues surrounding the content and applicability of IHL as it applies to terrorism as well as to analyse and contextualise the current debates on these controversial and critically important questions. While due heed is paid to doctrinal debates, particular emphasis is placed on the practice of social actors, particularly, although not exclusively, States. The analysis of their actual conduct as well as their expectations about the interpretation and application of the law is crucial to establishing an interpretive consensus on when and how IHL is relevant to regulate acts of terrorism. The approach of the book is analytical and discursive, rather than prescriptive. Thus the reader will find the relevant rules of IHL and other legal regimes as regards terrorism, but also the debates over their application, the contradictions in State practice and the impact these may have upon IHL's evolution and implementation. The aim is to provide legal practitioners, as well as those in military, political and academic circles, with a useful reference point. Hopefully the book will also prove useful to other readers who will find its content and easy-to-read style an encouragement to getting acquainted with a topical subject, traditionally thought to be reserved for legal specialists. This book was cited with approval by the US Court of Appeals in Salim Ahmed Hamdan v United States of America, 16th October 2012