Hot-carrier Reliability of CMOS Integrated Circuits PDF Download
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Author: Jone Fang Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
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Book Description
Author: Jone Fang Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 886
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2092
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1368
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Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 948
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Book Description
Author: Alvin W. Strong
Publisher: John Wiley & Sons
ISBN: 047045525X
Category : Technology & Engineering
Languages : en
Pages : 642
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Book Description
This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
Author: Jaume Segura
Publisher: John Wiley & Sons
ISBN: 9780471476696
Category : Technology & Engineering
Languages : en
Pages : 370
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Book Description
CMOS manufacturing environments are surrounded with symptoms that can indicate serious test, design, or reliability problems, which, in turn, can affect the financial as well as the engineering bottom line. This book educates readers, including non-engineers involved in CMOS manufacture, to identify and remedy these causes. This book instills the electronic knowledge that affects not just design but other important areas of manufacturing such as test, reliability, failure analysis, yield-quality issues, and problems. Designed specifically for the many non-electronic engineers employed in the semiconductor industry who need to reliably manufacture chips at a high rate in large quantities, this is a practical guide to how CMOS electronics work, how failures occur, and how to diagnose and avoid them. Key features: Builds a grasp of the basic electronics of CMOS integrated circuits and then leads the reader further to understand the mechanisms of failure. Unique descriptions of circuit failure mechanisms, some found previously only in research papers and others new to this publication. Targeted to the CMOS industry (or students headed there) and not a generic introduction to the broader field of electronics. Examples, exercises, and problems are provided to support the self-instruction of the reader.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 1461479096
Category : Technology & Engineering
Languages : en
Pages : 805
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Book Description
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author: Jacopo Franco
Publisher: Springer Science & Business Media
ISBN: 9400776632
Category : Technology & Engineering
Languages : en
Pages : 203
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Book Description
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Author: Jörg Henkel
Publisher: Springer Nature
ISBN: 303052017X
Category : Technology & Engineering
Languages : en
Pages : 606
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Book Description
This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems.
