Author: Yangchin Shih
Publisher:
ISBN:
Category :
Languages : en
Pages : 394
Book Description
Silicon Selective Epitaxial Growth by Low Pressure Chemical Vapor Deposition
Author: Yangchin Shih
Publisher:
ISBN:
Category :
Languages : en
Pages : 394
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 394
Book Description
Selective Silicon Epitaxial Growth at 800[degrees]C by Ultralow-pressure Chemical Vapor Deposition Using SiH4 and SiH4/H2
Author: Tri-Rung Yew
Publisher:
ISBN:
Category :
Languages : en
Pages : 26
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 26
Book Description
Selective Epitaxy of Silicon at Low Temperatures
Author: Jen-Chung Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
Book Description
Low Temperature Silicon Epitaxy by Low Pressure Chemical Vapor Deposition with and Without Plasma Enchancement
Author: Wayne Robert Burger
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 119
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 119
Book Description
Proceedings of the ... International Conference on Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 1294
Book Description
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 1294
Book Description
Low Temperature Silicon Epitaxy by Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement
Author: Wayne Robert Burger
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
Book Description
Hot-wall Silicon Epitaxy
Author: Carl Johan Galewski
Publisher:
ISBN:
Category :
Languages : en
Pages : 680
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 680
Book Description
Silicon Epitaxy
Author:
Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Publisher: Elsevier
ISBN: 0080541003
Category : Science
Languages : en
Pages : 514
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Low Temperature Silicon Epitaxy Using Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement
Author: Thomas Joseph Donahue
Publisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages : 9
Book Description
Publisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages : 9
Book Description
Low-temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 30
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 30
Book Description