Silicon Quantum Integrated Circuits PDF Download
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Author: E. Kasper
Publisher: Springer Science & Business Media
ISBN: 3540263829
Category : Technology & Engineering
Languages : en
Pages : 367
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Book Description
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Author: E. Kasper
Publisher: Springer Science & Business Media
ISBN: 3540263829
Category : Technology & Engineering
Languages : en
Pages : 367
Get Book Here
Book Description
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Author: Richard Osgood jr.
Publisher: Springer Nature
ISBN: 3030651932
Category : Science
Languages : en
Pages : 369
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Book Description
This graduate-level textbook presents the principles, design methods, simulation, and materials of photonic circuits. It provides state-of-the-art examples of silicon, indium phosphide, and other materials frequently used in these circuits, and includes a thorough discussion of all major types of devices. In addition, the book discusses the integrated photonic circuits (chips) that are currently increasingly employed on the international technology market in connection with short-range and long-range data communication. Featuring references from the latest research in the field, as well as chapter-end summaries and problem sets, Principles of Photonic Integrated Circuits is ideal for any graduate-level course on integrated photonics, or optical technology and communication.
Author: Horst Zimmermann
Publisher: Springer Science & Business Media
ISBN: 3662099047
Category : Technology & Engineering
Languages : en
Pages : 366
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Book Description
Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-μm CMOS. Numerous detailed illustrations help to elucidate the material.
Author: National Academies of Sciences, Engineering, and Medicine
Publisher: National Academies Press
ISBN: 030947969X
Category : Computers
Languages : en
Pages : 273
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Book Description
Quantum mechanics, the subfield of physics that describes the behavior of very small (quantum) particles, provides the basis for a new paradigm of computing. First proposed in the 1980s as a way to improve computational modeling of quantum systems, the field of quantum computing has recently garnered significant attention due to progress in building small-scale devices. However, significant technical advances will be required before a large-scale, practical quantum computer can be achieved. Quantum Computing: Progress and Prospects provides an introduction to the field, including the unique characteristics and constraints of the technology, and assesses the feasibility and implications of creating a functional quantum computer capable of addressing real-world problems. This report considers hardware and software requirements, quantum algorithms, drivers of advances in quantum computing and quantum devices, benchmarks associated with relevant use cases, the time and resources required, and how to assess the probability of success.
Author: Horst Zimmermann
Publisher: Springer
ISBN: 3030058220
Category : Science
Languages : en
Pages : 456
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Book Description
Explains the circuit design of silicon optoelectronic integrated circuits (OEICs), which are central to advances in wireless and wired telecommunications. The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS, and BiCMOS technologies. This information provides the basis for understanding the underlying mechanisms of the OEICs described in the main part of the book. In order to cover the topic comprehensively, Silicon Optoelectronic Integrated Circuits presents detailed descriptions of many OEICs for a wide variety of applications from various optical sensors, smart sensors, 3D-cameras, and optical storage systems (DVD) to fiber receivers in deep-sub-μm CMOS. Numerous detailed illustrations help to elucidate the material.
Author: Lukas Chrostowski
Publisher: Cambridge University Press
ISBN: 1107085454
Category : Science
Languages : en
Pages : 439
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Book Description
This hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs.
Author:
Publisher:
ISBN:
Category : Electronic circuits
Languages : en
Pages : 296
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Book Description
Author: Eugenio Culurciello
Publisher: McGraw Hill Professional
ISBN: 0071608494
Category : Technology & Engineering
Languages : en
Pages : 413
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Book Description
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. The Latest Silicon-on-Sapphire CMOS Design and Fabrication Techniques Develop high-performance SOS-based microsystems. Filled with examples, schematics, and charts, Silicon-on-Sapphire Circuits and Systems covers the latest analog and mixed-signal IC design techniques. Learn how to assemble SOI/SOS circuits and systems, work with an insulated substrate and device models, create miniaturized amplifiers and switches, and build ADCs and DACs. You will also find information on constructing photosensitive circuits and memory chips, deploying integrated biosensors, overcoming noise and power issues, and maximizing efficiency. Discover how to: Extract active and passive device models and parameters Design single-stage amplifiers, op amps, references, and comparators Build digital processors, data converters, and mixed-mode circuits Deploy photodetectors in active pixel sensor and imaging arrays Optimize performance, quantum efficiency, and signal-to-noise ratio Develop current and voltage mode SOS-based biosensors Use CMOS, monolithic, and digital phase-shift isolation techniques Integrate the latest three-dimensional assemblies and die packages
Author: Zahid Ali Khan Durrani
Publisher: World Scientific
ISBN: 1848164130
Category : Science
Languages : en
Pages : 300
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Book Description
This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.
Author: C.K. Maiti
Publisher: CRC Press
ISBN: 1466503475
Category : Technology & Engineering
Languages : en
Pages : 311
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Book Description
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
